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STMicroelectronics
STW12NM60N
278-STW12NM60N
PDF Datasheet
600V 10A N-CH MOSFET TO-247 410mR Power Transistor
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Tech Specifications
Package/Case
TO-247-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
410mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
410mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
STW12NM60N Description
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole TO-247-3
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