STMicroelectronics_STW20NM60

STMicroelectronics
STW20NM60  
Single FETs, MOSFETs

STMicroelectronics
STW20NM60
278-STW20NM60
MOSFET N-CH 600V 20A TO247-3
In Stock : 960

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    STW20NM60 Description

    STW20NM60 is a power MOSFET manufactured by STMicroelectronics. It is a N-channel enhancement mode device that is designed for high voltage and high current applications. Here is a brief description of the STW20NM60 along with its features and applications:

    Description:

    The STW20NM60 is a high voltage N-channel power MOSFET that features a low on-state resistance (RDS(on)) and fast switching capabilities. It is available in a TO-220 package, making it suitable for a wide range of applications.

    Features:

    1. High voltage rating: The STW20NM60 can handle a maximum drain-source voltage (VDS) of 600V, making it suitable for high voltage applications.
    2. Low on-state resistance: The device has a low RDS(on) of 0.65mΩ (typical) at a gate-source voltage (VGS) of 10V, which helps to minimize power dissipation and improve efficiency.
    3. Fast switching: The STW20NM60 has a low input capacitance and fast switching times, making it suitable for high frequency applications.
    4. High current capability: The device can handle a continuous drain current (ID) of up to 20A, making it suitable for high current applications.
    5. Built-in protection: The STW20NM60 features built-in protection against over-voltage, over-current, and over-temperature conditions.

    Applications:

    The STW20NM60 is suitable for a wide range of applications that require high voltage and high current handling capabilities. Some of the common applications include:

    1. Motor control: The device can be used in motor control applications such as electric vehicles, industrial motor drives, and robotics.
    2. Power supplies: The STW20NM60 can be used in power supply applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    3. Renewable energy: The device can be used in renewable energy applications such as solar panel inverters and wind turbine converters.
    4. Battery management: The STW20NM60 can be used in battery management systems for electric vehicles and energy storage systems.
    5. Lighting: The device can be used in high-power LED lighting applications for streetlights, industrial lighting, and automotive lighting.

    In summary, the STW20NM60 is a high voltage, high current power MOSFET that offers low on-state resistance, fast switching, and built-in protection features. It is suitable for a wide range of applications that require high voltage and high current handling capabilities.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Length
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STW20NM60 Documents

    Download datasheets and manufacturer documentation for STW20NM60

    Ersa IPG-PWR/14/8674 02/Sep/2014      
    Ersa STx20NM60(-1,FP)      
    Ersa Standard outer labelling 15/Nov/2023      
    Ersa STW20NM60 View All Specifications      
    Ersa STx20NM60(-1,FP)      

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