The STW21N90K5 from STMicroelectronics is a 900V N-channel SuperMESH5™ MOSFET designed for high-efficiency power switching applications. Built using advanced Metal Oxide Semiconductor (MOSFET) technology, it delivers robust performance with a continuous drain current (Id) of 18.5A (Tc) and a low on-resistance (Rds(on)) of 299mΩ at 10V gate drive. The device features a high drain-to-source voltage (Vdss) rating of 900V, making it suitable for demanding high-voltage circuits. Packaged in a TO-247-3 through-hole format, it ensures excellent thermal dissipation with a maximum power rating of 250W (Tc).
The STW21N90K5 is a high-performance 900V MOSFET optimized for efficiency, thermal management, and reliability in demanding power electronics. Its SuperMESH5™ architecture, low gate charge, and high voltage rating make it ideal for industrial, renewable energy, and automotive applications. With STMicroelectronics' proven quality, this device is a strong choice for engineers designing high-efficiency, high-voltage switching systems.
Download datasheets and manufacturer documentation for STW21N90K5