STMicroelectronics_STF15N80K5

STMicroelectronics
STF15N80K5  
Single FETs, MOSFETs

STMicroelectronics
STF15N80K5
278-STF15N80K5
Ersa
STMicroelectronics-STF15N80K5-datasheets-3245236.pdf
MOSFET N-CH 800V 14A TO220FP
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    STF15N80K5 Description

    STMicroelectronics' STF15N80K5 is a high-power, high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a variety of applications. Here's a description of the STF15N80K5, its features, and potential applications:

    Description:

    The STF15N80K5 is a member of the STPOWER series of MOSFETs from STMicroelectronics. It is an N-channel enhancement mode device with a high cell density for low on-state resistance (RDS(on)). The device is offered in a TO-220AB package, which is suitable for a wide range of power electronics applications.

    Features:

    1. High Voltage and Power Ratings: The STF15N80K5 is designed to handle high voltage and power, with a drain-source voltage (VDS) of up to 800V and a continuous drain current (ID) of up to 15A.

    2. Low On-State Resistance (RDS(on)): The device features a low on-state resistance, which minimizes power dissipation and improves efficiency in power conversion applications.

    3. High Cell Density: The high cell density of the MOSFET allows for better heat dissipation and improved performance in high-current applications.

    4. Robustness: The STF15N80K5 is designed to be robust against electrostatic discharge (ESD) and other transient voltages, making it suitable for use in harsh environments.

    5. Gate Drive Requirements: The device has low gate charge and threshold voltage, which simplifies the design of the gate drive circuitry and reduces power consumption.

    6. Thermal Performance: The TO-220AB package provides good thermal performance, allowing for efficient heat dissipation and maintaining the device's performance under high-temperature conditions.

    Applications:

    1. Motor Control: The STF15N80K5 is well-suited for use in motor control applications, such as industrial motor drives, HVAC systems, and automotive applications.

    2. Power Supplies: The device can be used in various power supply applications, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).

    3. Inverters: The high voltage and current ratings make the STF15N80K5 suitable for use in inverter applications, such as solar panel inverters and battery chargers.

    4. UPS Systems: The device's robustness and high-power capabilities make it suitable for use in UPS systems, providing reliable power backup during power outages.

    5. Industrial Automation: The STF15N80K5 can be used in various industrial automation applications, such as robotic control systems and programmable logic controllers (PLCs).

    6. Battery Management Systems: The device can be used in battery management systems for electric vehicles (EVs) and energy storage systems, providing efficient power management and control.

    In summary, the STF15N80K5 is a high-power, high-voltage N-channel MOSFET from STMicroelectronics, designed for use in a wide range of power electronics applications. Its features, such as low on-state resistance, high cell density, and robustness, make it suitable for applications like motor control, power supplies, inverters, UPS systems, industrial automation, and battery management systems.

    Tech Specifications

    Configuration
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STF15N80K5 Documents

    Download datasheets and manufacturer documentation for STF15N80K5

    Ersa STx15N80K5      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STF15N80K5 View All Specifications      

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