STMicroelectronics_STL11N65M5

STMicroelectronics
STL11N65M5  
Single FETs, MOSFETs

STMicroelectronics
STL11N65M5
278-STL11N65M5
Ersa
STMicroelectronics-STL11N65M5-datasheets-983620.pdf
MOSFET N-CH 650V 8.5A POWERFLAT
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STL11N65M5 Description

STL11N65M5 Description

The STL11N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. This MOSFET is part of the MDmesh™ series and is offered in a compact PowerFLAT™ (5x5) package, making it ideal for space-constrained designs. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 8.5A at 25°C, the STL11N65M5 is well-suited for various power electronics applications.

STL11N65M5 Features

  • High Voltage and Current Handling: The STL11N65M5 can handle a maximum drain-to-source voltage of 650V and a continuous drain current of 8.5A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: The maximum on-resistance (Rds On) of 530mOhm at 4.25A and 10V ensures efficient power dissipation and reduced power loss.
  • Low Gate Charge: The maximum gate charge (Qg) of 17nC at 10V contributes to faster switching speeds and reduced power consumption in the gate drive circuit.
  • Robust Package: The PowerFLAT™ (5x5) package provides excellent thermal performance and mechanical robustness, making it suitable for demanding power electronics applications.
  • Compliance and Certifications: The STL11N65M5 is compliant with REACH and RoHS3 regulations, ensuring environmental and safety standards are met.

STL11N65M5 Applications

The STL11N65M5 is ideal for various high-power applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, the STL11N65M5 is suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  2. Motor Control: The low on-resistance and high current handling capabilities make the STL11N65M5 an excellent choice for motor control applications, including electric vehicles (EVs) and industrial motor drives.
  3. Renewable Energy: The STL11N65M5 can be used in solar inverters and wind turbine converters, where high voltage and current ratings are critical for efficient energy conversion.

Conclusion of STL11N65M5

The STL11N65M5 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage, current handling capabilities, and low on-resistance. Its compact PowerFLAT™ package and compliance with environmental and safety regulations make it an ideal choice for a wide range of power electronics applications, including power supplies, motor control, and renewable energy systems. With its unique features and advantages over similar models, the STL11N65M5 stands out as a reliable and efficient solution for demanding high-power applications.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL11N65M5 Documents

Download datasheets and manufacturer documentation for STL11N65M5

Ersa Product Change Notification (PDF)      

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