STMicroelectronics_STP45N65M5

STMicroelectronics
STP45N65M5  
Single FETs, MOSFETs

STMicroelectronics
STP45N65M5
278-STP45N65M5
Ersa
STMicroelectronics-STP45N65M5-datasheets-4212030.pdf
MOSFET N-CH 650V 35A TO220
In Stock : 2173

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STP45N65M5 Description

STP45N65M5 Description

The STP45N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 35A at 25°C, this MOSFET is well-suited for high-power applications. Its low on-resistance (Rds On) of 78mOhm at 19.5A and 10V ensures minimal power dissipation, while the maximum gate-source voltage (Vgs) of ±25V provides flexibility in gate drive requirements.

STP45N65M5 Features

  • High Voltage and Current Ratings: The STP45N65M5 boasts a drain-source voltage of 650V and a continuous drain current of 35A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With an Rds On of just 78mOhm at 19.5A and 10V, this MOSFET minimizes power losses and operates efficiently.
  • Flexible Gate Drive: The maximum gate-source voltage of ±25V allows for compatibility with a wide range of gate drive circuits.
  • Robust Power Dissipation: Capable of handling up to 210W of power dissipation at the case temperature (Tc), this MOSFET is designed for demanding applications.
  • Compliance and Environmental Standards: The STP45N65M5 is REACH unaffected and RoHS3 compliant, ensuring environmental responsibility and regulatory compliance.
  • Operating Temperature: With an operating junction temperature (TJ) of 150°C, this MOSFET can withstand high-temperature environments.

STP45N65M5 Applications

The STP45N65M5 is well-suited for various high-power applications, including:

  • Power Supplies: Its high voltage and current ratings make it ideal for power supply designs, particularly in industrial and automotive applications.
  • Motor Control: The low on-resistance and high current capability make it suitable for motor control applications, where efficient switching and power handling are critical.
  • Industrial Automation: The robust power dissipation and high operating temperature make it a reliable choice for industrial automation systems.
  • Renewable Energy: Its high voltage and current ratings make it suitable for solar inverters and other renewable energy applications.

Conclusion of STP45N65M5

The STP45N65M5 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding high-power applications. Its combination of high voltage and current ratings, low on-resistance, and robust power dissipation make it an ideal choice for power supplies, motor control, industrial automation, and renewable energy applications. With its compliance with environmental standards and its ability to operate in high-temperature environments, the STP45N65M5 offers a reliable and efficient solution for a wide range of applications.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP45N65M5 Documents

Download datasheets and manufacturer documentation for STP45N65M5

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