STMicroelectronics_STB37N60DM2AG

STMicroelectronics
STB37N60DM2AG  
Single FETs, MOSFETs

STMicroelectronics
STB37N60DM2AG
278-STB37N60DM2AG
Ersa
STMicroelectronics-STB37N60DM2AG-datasheets-2953461.pdf
MOSFET N-CH 600V 28A D2PAK
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STB37N60DM2AG Description

STB37N60DM2AG Description

The STB37N60DM2AG is a high-performance N-Channel MOSFET from STMicroelectronics, designed to meet the demands of modern electronic systems. This device offers a unique combination of high voltage and current capabilities, making it ideal for a wide range of applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 28A at 25°C, the STB37N60DM2AG is capable of handling high power levels while maintaining efficiency.

STB37N60DM2AG Features

  • High Voltage and Current Ratings: The STB37N60DM2AG boasts a Vdss of 600V and an Id of 28A, making it suitable for high-power applications.
  • Low On-Resistance: With an Rds(on) of 110mOhm at 14A and 10V, this MOSFET provides efficient power delivery with minimal losses.
  • Robust Gate Drive: The device features a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation in various gate drive conditions.
  • Automotive Grade: Designed for automotive applications, the STB37N60DM2AG meets the stringent requirements of the automotive industry.
  • Surface Mount Technology: The device is mounted using surface mount technology, allowing for compact and efficient board layouts.
  • Compliance with Regulations: The STB37N60DM2AG is REACH unaffected and RoHS3 compliant, ensuring environmental and health safety.

STB37N60DM2AG Applications

The STB37N60DM2AG is ideal for applications that require high voltage and current handling capabilities. Some specific use cases include:

  • Automotive Systems: Due to its automotive grade rating, the STB37N60DM2AG is well-suited for various automotive applications, such as electric vehicle (EV) charging systems and powertrain control.
  • Industrial Control Systems: The high voltage and current ratings make it suitable for industrial control systems, where high power and reliability are crucial.
  • Power Supplies: The STB37N60DM2AG can be used in power supply designs, particularly those requiring high efficiency and low on-resistance.
  • Renewable Energy Systems: In solar power inverters and wind turbine converters, the STB37N60DM2AG can handle the high voltage and current demands of these systems.

Conclusion of STB37N60DM2AG

The STB37N60DM2AG from STMicroelectronics is a powerful N-Channel MOSFET that offers high voltage and current capabilities, making it an excellent choice for a variety of high-power applications. Its automotive-grade rating, combined with its compliance with environmental regulations, makes it a reliable and efficient solution for demanding electronic systems. With its unique features and performance benefits, the STB37N60DM2AG stands out as a superior option in the market for high-power MOSFETs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STB37N60DM2AG Documents

Download datasheets and manufacturer documentation for STB37N60DM2AG

Ersa Product Change Notification 2024-03-05 (PDF)       PROCESS CHANGE NOTIFICATION (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

Shopping Guide

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