STMicroelectronics_STP12NK80Z

STMicroelectronics
STP12NK80Z  
Single FETs, MOSFETs

STMicroelectronics
STP12NK80Z
278-STP12NK80Z
MOSFET N-CH 800V 10.5A TO220AB
In Stock : 1117

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STP12NK80Z Description

STP12NK80Z Description

The STP12NK80Z is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding power electronics applications. With a drain-to-source voltage rating of 800V and continuous drain current of 10.5A at 25°C, this device delivers exceptional performance in high-voltage, high-current applications. The STP12NK80Z features a SuperMESH™ structure, which provides low on-resistance and high efficiency. It is packaged in a TO220AB through-hole package, making it suitable for a wide range of power electronics designs.

STP12NK80Z Features

  • High Voltage and Current Ratings: The STP12NK80Z boasts an 800V drain-to-source voltage rating and a continuous drain current of 10.5A at 25°C, making it ideal for high-voltage, high-current applications.
  • SuperMESH™ Structure: This advanced structure provides low on-resistance and high efficiency, ensuring optimal performance in power electronics applications.
  • Low Gate Charge: With a maximum gate charge of 87nC at 10V, the STP12NK80Z offers fast switching and low power consumption.
  • Robust Package: The TO220AB through-hole package provides excellent thermal performance and mechanical stability, making it suitable for a wide range of applications.
  • Compliance: The STP12NK80Z is compliant with REACH, RoHS3, and is classified as EAR99, ensuring regulatory compliance in various markets.

STP12NK80Z Applications

The STP12NK80Z is ideal for a variety of high-voltage, high-current power electronics applications, including:

  • Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, where high efficiency and low power loss are critical.
  • Motor Control: The STP12NK80Z can be used in motor control applications, providing high efficiency and fast switching capabilities.
  • Industrial Automation: Its robustness and high voltage ratings make it suitable for use in industrial automation systems, where reliability and performance are essential.
  • Renewable Energy: The STP12NK80Z can be used in renewable energy systems, such as solar inverters and wind power converters, where high voltage and current ratings are required.

Conclusion of STP12NK80Z

The STP12NK80Z is a high-performance N-Channel MOSFET from STMicroelectronics, offering exceptional performance in high-voltage, high-current applications. Its SuperMESH™ structure, low gate charge, and robust package make it an ideal choice for power supplies, motor control, industrial automation, and renewable energy systems. With its compliance with REACH, RoHS3, and EAR99, the STP12NK80Z is a reliable and efficient solution for demanding power electronics applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Forward Transconductance - Min
Pd - Power Dissipation
USHTS

STP12NK80Z Documents

Download datasheets and manufacturer documentation for STP12NK80Z

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Shopping Guide

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