STMicroelectronics_STH270N8F7-2

STMicroelectronics
STH270N8F7-2  
Single FETs, MOSFETs

STMicroelectronics
STH270N8F7-2
278-STH270N8F7-2
Ersa
STMicroelectronics-STH270N8F7-2-datasheets-13032686.pdf
MOSFET N-CH 80V 180A H2PAK
In Stock : 40008

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STH270N8F7-2 Description

STH270N8F7-2 Description

The STH270N8F7-2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications requiring high power and efficiency. With a drain to source voltage of 80V and a continuous drain current of 180A at 25°C, this MOSFET is suitable for a wide range of applications, including power electronics, motor control, and industrial automation.

STH270N8F7-2 Features

  • High Power Dissipation: The STH270N8F7-2 can handle a maximum power dissipation of 315W, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds On) of 2.1mOhm at 90A and 10V, this MOSFET provides high efficiency and low power loss.
  • High Input Capacitance: The maximum input capacitance (Ciss) of 13.6nF at 50V ensures fast switching and minimal signal distortion.
  • Low Gate Charge: The maximum gate charge (Qg) of 193nC at 10V reduces switching losses and improves efficiency.
  • Robust Package: The H2PAK package provides excellent thermal performance and mechanical robustness, suitable for harsh environments.
  • Compliance: This MOSFET is REACH unaffected, RoHS3 compliant, and has an ECCN of EAR99, ensuring regulatory compliance.

STH270N8F7-2 Applications

The STH270N8F7-2 is ideal for applications requiring high power and efficiency, such as:

  1. Power Electronics: In power supplies, converters, and inverters, this MOSFET's high power dissipation and low on-resistance ensure high efficiency and reliability.
  2. Motor Control: For electric vehicles, industrial drives, and robotics, this MOSFET's high current and voltage ratings provide excellent performance and control.
  3. Industrial Automation: In motor drives, power distribution, and control systems, this MOSFET's robust package and high power capabilities ensure long-term reliability and performance.

Conclusion of STH270N8F7-2

The STH270N8F7-2 is a high-performance N-Channel MOSFET from STMicroelectronics, offering high power dissipation, low on-resistance, and fast switching capabilities. Its robust package, compliance with regulations, and suitability for a wide range of applications make it an excellent choice for demanding power electronics, motor control, and industrial automation applications. With its unique features and advantages over similar models, the STH270N8F7-2 is a reliable and efficient solution for high-power applications.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STH270N8F7-2 Documents

Download datasheets and manufacturer documentation for STH270N8F7-2

Ersa STH270N8F7-2/6, STP270N8F7      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STH270N8F7-2/6, STP270N8F7      
Ersa STP270N8F7 24/Mar/2021      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service