The STP33N65M2 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power switching applications. Built on MDmesh™ M2 technology, it delivers an optimal balance of low on-resistance (140mΩ @ 12A, 10V) and high breakdown voltage (650V), making it ideal for high-efficiency power conversion. With a continuous drain current (Id) of 24A (Tc) and a power dissipation capability of 190W (Tc), this device excels in high-power environments. Its low gate charge (Qg: 41.5nC @ 10V) and input capacitance (Ciss: 1790pF @ 100V) ensure fast switching performance, reducing switching losses in high-frequency circuits.
The STP33N65M2 stands out as a high-efficiency, high-reliability MOSFET for power electronics, combining low Rds(on), fast switching, and thermal robustness. Its MDmesh™ M2 technology ensures superior performance in SMPS, motor drives, and renewable energy systems, making it a preferred choice for engineers seeking a balance of power density and efficiency. With STMicroelectronics' proven quality, this device is a dependable solution for demanding applications.
Download datasheets and manufacturer documentation for STP33N65M2