STMicroelectronics_STP33N65M2

STMicroelectronics
STP33N65M2  
Single FETs, MOSFETs

STMicroelectronics
STP33N65M2
278-STP33N65M2
Ersa
STMicroelectronics-STP33N65M2-datasheets-4339791.pdf
MOSFET N-CH 650V 24A TO220
In Stock : 1964

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STP33N65M2 Description

STP33N65M2 Description

The STP33N65M2 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power switching applications. Built on MDmesh™ M2 technology, it delivers an optimal balance of low on-resistance (140mΩ @ 12A, 10V) and high breakdown voltage (650V), making it ideal for high-efficiency power conversion. With a continuous drain current (Id) of 24A (Tc) and a power dissipation capability of 190W (Tc), this device excels in high-power environments. Its low gate charge (Qg: 41.5nC @ 10V) and input capacitance (Ciss: 1790pF @ 100V) ensure fast switching performance, reducing switching losses in high-frequency circuits.

STP33N65M2 Features

  • High Voltage & Current Rating: 650V Vdss and 24A Id for robust power handling.
  • Low Rds(on): 140mΩ @ 12A, 10V minimizes conduction losses.
  • Fast Switching: Optimized gate charge (41.5nC) and low Ciss enhance efficiency in high-frequency designs.
  • Thermal Performance: 150°C max junction temperature (TJ) and TO-220 package for effective heat dissipation.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.
  • Wide Drive Voltage Range: ±25V Vgs(max) with 10V recommended for optimal Rds(on).

STP33N65M2 Applications

  • Switched-Mode Power Supplies (SMPS): High-efficiency AC/DC and DC/DC converters.
  • Motor Drives & Inverters: Suitable for industrial and automotive motor control systems.
  • Solar Inverters & UPS: Reliable performance in renewable energy and backup power applications.
  • Induction Heating & Lighting: Fast switching for high-frequency resonant circuits.
  • Electronic Ballasts & PFC Circuits: Low-loss operation in power factor correction stages.

Conclusion of STP33N65M2

The STP33N65M2 stands out as a high-efficiency, high-reliability MOSFET for power electronics, combining low Rds(on), fast switching, and thermal robustness. Its MDmesh™ M2 technology ensures superior performance in SMPS, motor drives, and renewable energy systems, making it a preferred choice for engineers seeking a balance of power density and efficiency. With STMicroelectronics' proven quality, this device is a dependable solution for demanding applications.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Supplier Temperature Grade
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Maximum Drain Source Resistance (MOhm)
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Typical Gate Threshold Voltage (V)
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
ECCN
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Package Length
Series
Operating Junction Temperature (°C)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP33N65M2 Documents

Download datasheets and manufacturer documentation for STP33N65M2

Ersa STx33N65M2      
Ersa STx33N65M2      

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