STMicroelectronics
STL220N6F7
Single FETs, MOSFETs
STL220N6F7
278-STL220N6F7
STMicroelectronics-STL220N6F7-datasheets-553483.pdf
MOSFET N-CH 60V 120A POWERFLAT
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STL220N6F7 Description
STMicroelectronics' STL220N6F7 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a variety of applications, including power electronics and motor control.
Description:
The STL220N6F7 is an N-channel enhancement mode MOSFET with a breakdown voltage (V(BR)) of 60V. It is available in a TO-220 package, which is a popular and widely used package for power MOSFETs.
Features:
- High-power capability: The STL220N6F7 is designed to handle high power levels, making it suitable for use in power electronics applications.
- Low on-state resistance (RDS(on)): This MOSFET has a low on-state resistance, which helps to minimize power losses and improve efficiency.
- Fast switching speed: The STL220N6F7 has a fast switching speed, which makes it suitable for use in applications that require rapid switching.
- High temperature operation: This MOSFET is designed to operate at high temperatures, making it suitable for use in harsh environments.
Applications:
- Power electronics: The STL220N6F7 can be used in a variety of power electronics applications, including power supplies, converters, and inverters.
- Motor control: This MOSFET is suitable for use in motor control applications, including brushless DC motor control and stepper motor control.
- Automotive applications: The STL220N6F7 can be used in automotive applications, such as electric power steering and electric braking systems.
- Industrial control: This MOSFET can be used in industrial control applications, such as robotic control and factory automation systems.
In summary, the STL220N6F7 is a high-power MOSFET from STMicroelectronics that is designed for use in power electronics and motor control applications. It features a low on-state resistance, fast switching speed, and high temperature operation, making it suitable for a variety of applications.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STL220N6F7 Documents
Download datasheets and manufacturer documentation for STL220N6F7
Product Change Notification (PDF) PRODUCT CHANGE NOTIFICATION (PDF) Related Parts
Shopping Guide
Payment Methods
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