
STMicroelectronics
STP8NK80Z
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STP8NK80Z Description
STP8NK80Z Description
The STP8NK80Z is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and high voltage endurance. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 6.2A at 25°C, this device is well-suited for demanding power electronics applications. The STP8NK80Z operates within a wide gate-source voltage range (±30V) and offers a low on-resistance (Rds On) of 1.5 Ohms at 3.1A and 10V, ensuring efficient power transfer and minimal power loss.
STP8NK80Z Features
- High Voltage Tolerance: Capable of withstanding 800V drain-to-source voltage, making it ideal for high-voltage applications.
- Low On-Resistance: 1.5 Ohms at 3.1A and 10V, reducing power dissipation and improving efficiency.
- Wide Gate-Source Voltage Range: Operates within ±30V, providing flexibility in circuit design.
- High Input Capacitance: 1320 pF at 25V, allowing for fast switching speeds.
- Low Gate Charge: 46 nC at 10V, reducing switching losses and improving overall efficiency.
- Robust Power Dissipation: Capable of dissipating up to 140W (Tc), suitable for high-power applications.
- Compliance: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
- Mounting Type: Through-hole, facilitating easy integration into existing designs.
STP8NK80Z Applications
The STP8NK80Z is ideal for a variety of high-voltage and high-power applications, including:
- Power Supplies: Utilized in high-voltage power supply designs for efficient power regulation and control.
- Industrial Automation: Employed in motor control circuits for precise speed and torque adjustments.
- Renewable Energy: Used in solar inverters and wind turbine systems for reliable power conversion.
- Electric Vehicles: Integrated into battery management systems for efficient energy storage and distribution.
Conclusion of STP8NK80Z
The STP8NK80Z from STMicroelectronics stands out as a reliable and efficient MOSFET solution for high-voltage and high-power applications. Its unique combination of high voltage tolerance, low on-resistance, and robust power dissipation capabilities make it an excellent choice for demanding power electronics applications. With its compliance to industry standards and ease of integration, the STP8NK80Z offers a versatile and high-performance solution for engineers designing cutting-edge electronic systems.



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