The STP8NK80Z is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and high voltage endurance. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 6.2A at 25°C, this device is well-suited for demanding power electronics applications. The STP8NK80Z operates within a wide gate-source voltage range (±30V) and offers a low on-resistance (Rds On) of 1.5 Ohms at 3.1A and 10V, ensuring efficient power transfer and minimal power loss.
The STP8NK80Z is ideal for a variety of high-voltage and high-power applications, including:
The STP8NK80Z from STMicroelectronics stands out as a reliable and efficient MOSFET solution for high-voltage and high-power applications. Its unique combination of high voltage tolerance, low on-resistance, and robust power dissipation capabilities make it an excellent choice for demanding power electronics applications. With its compliance to industry standards and ease of integration, the STP8NK80Z offers a versatile and high-performance solution for engineers designing cutting-edge electronic systems.
Download datasheets and manufacturer documentation for STP8NK80Z