STMicroelectronics_STP8NK80Z

STMicroelectronics
STP8NK80Z  
Single FETs, MOSFETs

STMicroelectronics
STP8NK80Z
278-STP8NK80Z
MOSFET N-CH 800V 6.2A TO220AB
In Stock : 1606

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STP8NK80Z Description

STP8NK80Z Description

The STP8NK80Z is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and high voltage endurance. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 6.2A at 25°C, this device is well-suited for demanding power electronics applications. The STP8NK80Z operates within a wide gate-source voltage range (±30V) and offers a low on-resistance (Rds On) of 1.5 Ohms at 3.1A and 10V, ensuring efficient power transfer and minimal power loss.

STP8NK80Z Features

  • High Voltage Tolerance: Capable of withstanding 800V drain-to-source voltage, making it ideal for high-voltage applications.
  • Low On-Resistance: 1.5 Ohms at 3.1A and 10V, reducing power dissipation and improving efficiency.
  • Wide Gate-Source Voltage Range: Operates within ±30V, providing flexibility in circuit design.
  • High Input Capacitance: 1320 pF at 25V, allowing for fast switching speeds.
  • Low Gate Charge: 46 nC at 10V, reducing switching losses and improving overall efficiency.
  • Robust Power Dissipation: Capable of dissipating up to 140W (Tc), suitable for high-power applications.
  • Compliance: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
  • Mounting Type: Through-hole, facilitating easy integration into existing designs.

STP8NK80Z Applications

The STP8NK80Z is ideal for a variety of high-voltage and high-power applications, including:

  • Power Supplies: Utilized in high-voltage power supply designs for efficient power regulation and control.
  • Industrial Automation: Employed in motor control circuits for precise speed and torque adjustments.
  • Renewable Energy: Used in solar inverters and wind turbine systems for reliable power conversion.
  • Electric Vehicles: Integrated into battery management systems for efficient energy storage and distribution.

Conclusion of STP8NK80Z

The STP8NK80Z from STMicroelectronics stands out as a reliable and efficient MOSFET solution for high-voltage and high-power applications. Its unique combination of high voltage tolerance, low on-resistance, and robust power dissipation capabilities make it an excellent choice for demanding power electronics applications. With its compliance to industry standards and ease of integration, the STP8NK80Z offers a versatile and high-performance solution for engineers designing cutting-edge electronic systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP8NK80Z Documents

Download datasheets and manufacturer documentation for STP8NK80Z

Ersa ST(P,W)8NK80Z(FP)      
Ersa STP8NK80Z View All Specifications      
Ersa ST(P,W)8NK80Z(FP)      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service