STP13NM60N is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive systems.
Description:
The STP13NM60N is a N-channel MOSFET with a voltage rating of 600V and a continuous drain current of 13A. It features a low on-state resistance (RDS(on)) of 0.08 ohms, which helps to minimize power dissipation and improve efficiency in power switching applications.
Features:
High voltage rating: The STP13NM60N can handle voltages up to 600V, making it suitable for use in high-voltage applications.
Low on-state resistance: The low RDS(on) of 0.08 ohms helps to minimize power dissipation and improve efficiency in power switching applications.
High current capability: The device can handle a continuous drain current of 13A, making it suitable for use in high-current applications.
Robust construction: The MOSFET features a robust construction that provides excellent thermal performance and reliability.
Avalanche energy rating: The STP13NM60N has an avalanche energy rating of 80 Joules, which allows it to withstand short-circuit conditions without damage.
Applications:
Motor control: The STP13NM60N can be used in motor control applications, such as brushless DC motor drivers and AC motor controllers.
Power supplies: The MOSFET is suitable for use in power supply applications, including switch-mode power supplies (SMPS) and power factor correction (PFC) circuits.
Automotive systems: The STP13NM60N can be used in various automotive applications, such as electric power steering (EPS) systems, battery management systems, and electric vehicle (EV) charging systems.
Industrial control: The MOSFET can be used in industrial control applications, including variable frequency drives (VFDs) and servo motor controllers.
Renewable energy systems: The STP13NM60N can be used in renewable energy systems, such as solar panel inverters and wind turbine converters.
In summary, the STP13NM60N is a high-power MOSFET with a 600V voltage rating and 13A continuous drain current. It is designed for use in a variety of power electronic applications, including motor control, power supplies, automotive systems, industrial control, and renewable energy systems. Its low on-state resistance, robust construction, and high avalanche energy rating make it a reliable and efficient choice for these applications.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STP13NM60N Documents
Download datasheets and manufacturer documentation for STP13NM60N
STMicroelectronics - PCN 5-18-10 (PDF) TO-220 ECOPACK 2 graded moulding compound assembly capacity expansion - Subcontractor PSI Laguna (Philippines) (PDF) MDmesh II Technology, Power MOSFET Transistors, 8" Wafer size Front-end Capacity Extension - Ang Mo Kio (Singapore) (PDF) Product / Process Change Notification (PDF) Product Change Notification (PDF) PRODUCT CHANGE NOTIFICATION (PDF)
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