STMicroelectronics_STP13NM60N

STMicroelectronics
STP13NM60N  
Single FETs, MOSFETs

STMicroelectronics
STP13NM60N
278-STP13NM60N
Ersa
STMicroelectronics-STP13NM60N-datasheets-2269593.pdf
MOSFET N-CH 600V 11A TO220-3
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    STP13NM60N Description

    STP13NM60N is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive systems.

    Description:

    The STP13NM60N is a N-channel MOSFET with a voltage rating of 600V and a continuous drain current of 13A. It features a low on-state resistance (RDS(on)) of 0.08 ohms, which helps to minimize power dissipation and improve efficiency in power switching applications.

    Features:

    1. High voltage rating: The STP13NM60N can handle voltages up to 600V, making it suitable for use in high-voltage applications.
    2. Low on-state resistance: The low RDS(on) of 0.08 ohms helps to minimize power dissipation and improve efficiency in power switching applications.
    3. High current capability: The device can handle a continuous drain current of 13A, making it suitable for use in high-current applications.
    4. Robust construction: The MOSFET features a robust construction that provides excellent thermal performance and reliability.
    5. Avalanche energy rating: The STP13NM60N has an avalanche energy rating of 80 Joules, which allows it to withstand short-circuit conditions without damage.

    Applications:

    1. Motor control: The STP13NM60N can be used in motor control applications, such as brushless DC motor drivers and AC motor controllers.
    2. Power supplies: The MOSFET is suitable for use in power supply applications, including switch-mode power supplies (SMPS) and power factor correction (PFC) circuits.
    3. Automotive systems: The STP13NM60N can be used in various automotive applications, such as electric power steering (EPS) systems, battery management systems, and electric vehicle (EV) charging systems.
    4. Industrial control: The MOSFET can be used in industrial control applications, including variable frequency drives (VFDs) and servo motor controllers.
    5. Renewable energy systems: The STP13NM60N can be used in renewable energy systems, such as solar panel inverters and wind turbine converters.

    In summary, the STP13NM60N is a high-power MOSFET with a 600V voltage rating and 13A continuous drain current. It is designed for use in a variety of power electronic applications, including motor control, power supplies, automotive systems, industrial control, and renewable energy systems. Its low on-state resistance, robust construction, and high avalanche energy rating make it a reliable and efficient choice for these applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STP13NM60N Documents

    Download datasheets and manufacturer documentation for STP13NM60N

    Ersa STMicroelectronics - PCN 5-18-10 (PDF)       TO-220 ECOPACK 2 graded moulding compound assembly capacity expansion - Subcontractor PSI Laguna (Philippines) (PDF)       MDmesh II Technology, Power MOSFET Transistors, 8" Wafer size Front-end Capacity Extension - Ang Mo Kio (Singapore) (PDF)       Product / Process Change Notification (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

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