STMicroelectronics
STL23NM60ND  
Single FETs, MOSFETs

STMicroelectronics
STL23NM60ND
278-STL23NM60ND
MOSFET N-CH 600V 19.5A POWERFLAT
In Stock : 22817

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STL23NM60ND Description

STL23NM60ND Description

The STL23NM60ND is a high-performance N-Channel MOSFET from STMicroelectronics, designed for high-power applications. With a drain-to-source voltage of 600V and a continuous drain current of 19.5A at 25°C, this device offers excellent performance in demanding environments. The STL23NM60ND features a low on-resistance of 180mOhm at 10A and 10V, ensuring efficient power dissipation and minimal power loss. The device is packaged in a PowerFlat™ (8x8) HV package, suitable for surface mount applications.

STL23NM60ND Features

  • High Voltage Rating: 600V drain-to-source voltage for reliable operation in high-voltage circuits.
  • High Current Capacity: 19.5A continuous drain current at 25°C for efficient power handling.
  • Low On-Resistance: 180mOhm at 10A and 10V for minimal power loss and efficient operation.
  • Power Dissipation: 3W (Ta) and 150W (Tc) for effective heat management in high-power applications.
  • Gate Charge: 70nC at 10V for fast switching and low switching losses.
  • Input Capacitance: 2050pF at 50V for low parasitic capacitance and high-speed performance.
  • Operating Temperature: 150°C (TJ) for reliable operation in high-temperature environments.
  • RoHS Compliance: ROHS3 compliant for eco-friendly and sustainable electronics manufacturing.
  • REACH Status: REACH unaffected for compliance with European chemical regulations.

STL23NM60ND Applications

The STL23NM60ND is ideal for a wide range of high-power applications, including:

  1. Power Supplies: High-efficiency power conversion and regulation in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  2. Industrial Control: Motor control and drive applications, such as electric vehicles (EV), robotics, and automation systems.
  3. Renewable Energy: Solar inverters, wind turbines, and energy storage systems for efficient power conversion and management.
  4. Telecommunications: Power amplifiers and signal conditioning in base stations and communication infrastructure.
  5. Automotive: Power management and control in electric and hybrid vehicles, including battery management systems (BMS) and electric power steering (EPS).

Conclusion of STL23NM60ND

The STL23NM60ND is a versatile and high-performance N-Channel MOSFET, offering excellent voltage and current ratings for demanding high-power applications. Its low on-resistance, fast switching capabilities, and robust thermal performance make it an ideal choice for power supplies, industrial control, renewable energy, telecommunications, and automotive applications. Despite being classified as obsolete, the STL23NM60ND remains a reliable and efficient solution for engineers seeking a high-performance MOSFET in a compact PowerFlat™ package.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STL23NM60ND Documents

Download datasheets and manufacturer documentation for STL23NM60ND

Ersa PowerFLAT Assem Chg 25/Jul/2018      
Ersa STB11NK40Z View All Specifications      
Ersa Mult Dev EOL 17/Oct/2018      

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