STMicroelectronics_STP11NM60ND

STMicroelectronics
STP11NM60ND  
Single FETs, MOSFETs

STMicroelectronics
STP11NM60ND
278-STP11NM60ND
Ersa
STMicroelectronics-STP11NM60ND-datasheets-1145126.pdf
MOSFET N-CH 600V 10A TO220AB
In Stock : 680

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STP11NM60ND Description

STP11NM60ND Description

The STP11NM60ND is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. This MOSFET is part of the FDmesh™ II series, known for its excellent performance and reliability. With a drain-to-source voltage rating of 600V and a continuous drain current of 10A at 25°C, the STP11NM60ND is capable of handling demanding power electronic applications.

STP11NM60ND Features

  • 600V Drain-to-Source Voltage (Vdss): Ensures the device can handle high voltage applications without risk of breakdown.
  • 10A Continuous Drain Current (Id) @ 25°C: Provides ample current capacity for power electronics applications.
  • 450mOhm Rds On (Max) @ 5A, 10V: Offers low on-resistance for efficient power dissipation.
  • 5V Vgs(th) (Max) @ 250µA: Facilitates easy gate drive and control.
  • 30 nC Gate Charge (Qg) (Max) @ 10V: Minimizes switching losses, contributing to higher efficiency.
  • 850 pF Input Capacitance (Ciss) (Max) @ 50 V: Reduces parasitic effects and improves high-frequency performance.
  • 90W Power Dissipation (Max): Allows for operation in high-power applications.
  • Through Hole Mounting Type: Facilitates easy integration into existing designs.
  • ROHS3 Compliance: Ensures environmental sustainability and regulatory compliance.
  • Moisture Sensitivity Level (MSL) 1: Indicates unlimited storage time before baking is required, simplifying logistics.

STP11NM60ND Applications

The STP11NM60ND is ideal for a variety of applications where high voltage and current handling are required, such as:

  • Power Supplies: Due to its high voltage and current ratings, it is suitable for power supply designs.
  • Industrial Controls: The robustness of the STP11NM60ND makes it a good fit for industrial control systems.
  • Automotive Electronics: The device's ability to handle high temperatures and voltages makes it suitable for automotive applications.
  • Renewable Energy Systems: Its high power dissipation capability is beneficial in solar inverters and wind power systems.

Conclusion of STP11NM60ND

The STP11NM60ND stands out with its combination of high voltage and current ratings, low on-resistance, and compliance with environmental regulations. Its unique features, such as low gate charge and input capacitance, make it an excellent choice for applications demanding high efficiency and performance. The STP11NM60ND's versatility and reliability make it a preferred choice in the electronics industry for high-power applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Operating Junction Temperature (°C)
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP11NM60ND Documents

Download datasheets and manufacturer documentation for STP11NM60ND

Ersa STx11NM60ND      
Ersa STB11NK40Z View All Specifications      
Ersa STx11NM60ND      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service