STMicroelectronics
STL160N4F7  
Single FETs, MOSFETs

STMicroelectronics
STL160N4F7
278-STL160N4F7
Ersa
STMicroelectronics-STL160N4F7-datasheets-11648443.pdf
MOSFET N-CH 40V 120A POWERFLAT
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STL160N4F7 Description

STL160N4F7 Description

The STL160N4F7 is a high-performance MOSFET N-CH 40V 120A POWERFLAT device from STMicroelectronics, designed for a wide range of applications in the electronics industry. This device offers exceptional technical specifications and performance benefits, making it an ideal choice for various applications.

STL160N4F7 Features

  • Technology: MOSFET (Metal Oxide) - Ensures high efficiency and reliability in electronic circuits.
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V - Minimizes capacitive effects, improving switching speed and reducing power loss.
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V - Reduces switching losses and improves efficiency.
  • Drain to Source Voltage (Vdss): 40 V - Provides high voltage tolerance for various applications.
  • Power Dissipation (Max): 111W (Tc) - Enables high power handling capabilities.
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 16A, 10V - Offers low on-resistance for efficient power management.
  • Vgs(th) (Max) @ Id: 4V @ 250µA - Ensures reliable and consistent threshold voltage performance.
  • Series: STripFET™ F7 - Part of a high-performance series known for its superior characteristics.
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc) - Delivers high current capabilities for demanding applications.
  • Drive Voltage (Max Rds On, Min Rds On): 10V - Facilitates easy integration with various control circuits.

STL160N4F7 Applications

The STL160N4F7 is ideal for a variety of applications where high performance, efficiency, and reliability are critical. Some specific use cases include:

  1. Power Electronics: Due to its high voltage and current ratings, the STL160N4F7 is well-suited for power electronics applications, such as power supplies, converters, and inverters.
  2. Industrial Control: The device's robust performance makes it suitable for industrial control systems, where high reliability and efficiency are essential.
  3. Automotive Electronics: The STL160N4F7 can be used in automotive applications, such as electric vehicle charging systems and power management, thanks to its high power dissipation capabilities.
  4. Renewable Energy Systems: In solar power inverters and wind energy systems, the STL160N4F7's high voltage and current ratings make it an excellent choice for efficient energy conversion and management.

Conclusion of STL160N4F7

The STL160N4F7 from STMicroelectronics is a high-performance MOSFET N-CH 40V 120A POWERFLAT device that offers exceptional technical specifications and performance benefits. Its unique features, such as low on-resistance, high voltage and current ratings, and superior efficiency, make it an ideal choice for a wide range of applications in the electronics industry. With its proven reliability and performance, the STL160N4F7 is a valuable addition to any design engineer's toolkit.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL160N4F7 Documents

Download datasheets and manufacturer documentation for STL160N4F7

Ersa STLxx 27/Nov/2023      
Ersa STL160N4F7      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      

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