STMicroelectronics_STD16N60M2

STMicroelectronics
STD16N60M2  
Single FETs, MOSFETs

STMicroelectronics
STD16N60M2
278-STD16N60M2
Ersa
STMicroelectronics-STD16N60M2-datasheets-4669797.pdf
MOSFET N-CH 600V 12A DPAK
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    STD16N60M2 Description

    STD16N60M2 Description

    The STD16N60M2 is a high-performance N-Channel MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 12A at 25°C, this device is ideal for use in various power electronics applications. The STD16N60M2 is manufactured using advanced technology and is available in a DPAK package, making it suitable for surface-mount applications.

    STD16N60M2 Features

    • High Voltage and Current Handling: The STD16N60M2 can handle a drain-to-source voltage of up to 600V and a continuous drain current of 12A at 25°C, making it suitable for high-power applications.
    • Low On-Resistance: With a maximum Rds(on) of 320mOhm at 6A and 10V, the STD16N60M2 offers low on-resistance, resulting in reduced power dissipation and improved efficiency.
    • Advanced Technology: Manufactured using STMicroelectronics' MDmesh™ M2 technology, the STD16N60M2 provides improved performance and reliability compared to previous generations.
    • Robust Package: The DPAK package allows for efficient heat dissipation and is suitable for surface-mount applications, making it ideal for use in compact and high-density designs.
    • Environmental Compliance: The STD16N60M2 is compliant with the RoHS3 directive and is unaffected by REACH regulations, ensuring environmental compliance in your designs.

    STD16N60M2 Applications

    The STD16N60M2 is ideal for use in a variety of applications where high voltage and current handling capabilities are required. Some specific use cases include:

    • Power Supplies: The high voltage and current ratings make the STD16N60M2 suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    • Industrial Control: The robustness and high power handling capabilities of the STD16N60M2 make it ideal for use in industrial control systems, such as motor drives and inverters.
    • Automotive Applications: The STD16N60M2 can be used in various automotive applications, such as electric vehicle (EV) charging systems and battery management systems.

    Conclusion of STD16N60M2

    The STD16N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and advanced technology. Its robust DPAK package and environmental compliance make it an ideal choice for a wide range of power electronics applications, including power supplies, industrial control systems, and automotive applications. With its unique features and advantages over similar models, the STD16N60M2 is a reliable and efficient solution for your high-power electronic designs.

    Tech Specifications

    Unit Weight
    Configuration
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD16N60M2 Documents

    Download datasheets and manufacturer documentation for STD16N60M2

    Ersa STD16N60M2      
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