STMicroelectronics_STL9N60M2

STMicroelectronics
STL9N60M2  
Single FETs, MOSFETs

STMicroelectronics
STL9N60M2
278-STL9N60M2
Ersa
STMicroelectronics-STL9N60M2-datasheets-7715495.pdf
MOSFET N-CH 600V 4.8A PWRFLAT56
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STL9N60M2 Description

STL9N60M2 Description

The STL9N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for power electronics applications. It is part of the MDmesh™ II Plus series and offers a superior combination of high voltage and low on-resistance. The device is manufactured using advanced MOSFET technology and is available in a PowerFlat™ (5x6) HV package, making it suitable for surface mount applications.

STL9N60M2 Features

  • High Voltage Rating: The STL9N60M2 can handle drain-to-source voltages up to 600V, making it ideal for high-voltage applications.
  • Low On-Resistance: With a maximum on-resistance of 860mOhm at 2.4A and 10V, the device offers high efficiency and low power dissipation.
  • High Input Capacitance: The maximum input capacitance is 320 pF at 100V, ensuring fast switching speeds and low gate charge.
  • Robust Gate Drive: The device can handle gate-source voltages up to ±25V, providing flexibility in gate drive requirements.
  • Low Threshold Voltage: The maximum threshold voltage is 4V at 250µA, enabling easy turn-on and low drive current.
  • Power Dissipation: The maximum power dissipation is 48W at case temperature, ensuring reliable operation in high-power applications.
  • Operating Temperature: The device can operate at junction temperatures up to 150°C, making it suitable for high-temperature environments.
  • Compliance: The STL9N60M2 is compliant with RoHS3 and REACH regulations, ensuring environmental and safety standards are met.

STL9N60M2 Applications

The STL9N60M2 is ideal for a wide range of power electronics applications, including:

  • Power Supplies: The high voltage and low on-resistance make it suitable for power supply designs, such as SMPS and DC-DC converters.
  • Motor Control: The device's high current capability and low on-resistance make it ideal for motor control applications, including industrial drives and electric vehicles.
  • Renewable Energy: The high voltage rating and robustness make it suitable for renewable energy applications, such as solar inverters and wind power systems.
  • Industrial Automation: The device's high power dissipation and operating temperature range make it ideal for industrial automation applications, including motor drives and power distribution.

Conclusion of STL9N60M2

The STL9N60M2 is a high-performance N-Channel MOSFET that offers a unique combination of high voltage, low on-resistance, and robust performance. Its advanced features, such as high input capacitance and low threshold voltage, make it an ideal choice for a wide range of power electronics applications. With its compliance with RoHS3 and REACH regulations, the STL9N60M2 is a reliable and environmentally friendly solution for demanding power electronics designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL9N60M2 Documents

Download datasheets and manufacturer documentation for STL9N60M2

Ersa STL9N60M2      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STL9N60M2      

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