The STB10N60M2 from STMicroelectronics is a high-performance N-channel 600V, 7.5A power MOSFET designed for demanding switching applications. Part of the MDmesh™ II Plus series, it leverages advanced Metal Oxide (MOSFET) technology to deliver superior efficiency, low conduction losses, and high switching speed. With a low on-resistance (Rds(on)) of 600mΩ at 10V gate drive, it minimizes power dissipation, making it ideal for high-voltage, high-frequency circuits. The device is housed in a D2PAK (TO-263) surface-mount package, ensuring robust thermal performance and compatibility with automated assembly processes.
The STB10N60M2 excels in:
The STB10N60M2 stands out as a high-efficiency, high-voltage MOSFET with low switching losses and robust thermal performance. Its MDmesh™ II Plus technology ensures superior performance in power conversion applications, while the D2PAK package offers mechanical and thermal advantages. Whether in industrial, automotive, or consumer electronics, this MOSFET delivers reliability, efficiency, and flexibility, making it a top choice for designers prioritizing performance and cost-effectiveness.
Download datasheets and manufacturer documentation for STB10N60M2