STMicroelectronics_STB10N60M2

STMicroelectronics
STB10N60M2  
Single FETs, MOSFETs

STMicroelectronics
STB10N60M2
278-STB10N60M2
Ersa
STMicroelectronics-STB10N60M2-datasheets-2027847.pdf
MOSFET N-CH 600V 7.5A D2PAK
In Stock : 6015

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STB10N60M2 Description

STB10N60M2 Description

The STB10N60M2 from STMicroelectronics is a high-performance N-channel 600V, 7.5A power MOSFET designed for demanding switching applications. Part of the MDmesh™ II Plus series, it leverages advanced Metal Oxide (MOSFET) technology to deliver superior efficiency, low conduction losses, and high switching speed. With a low on-resistance (Rds(on)) of 600mΩ at 10V gate drive, it minimizes power dissipation, making it ideal for high-voltage, high-frequency circuits. The device is housed in a D2PAK (TO-263) surface-mount package, ensuring robust thermal performance and compatibility with automated assembly processes.

STB10N60M2 Features

  • High Voltage Rating: 600V Vdss ensures reliability in high-power applications.
  • Low Gate Charge (Qg): 13.5nC @ 10V reduces switching losses, enhancing efficiency.
  • Optimized Rds(on): 600mΩ @ 3A, 10V for minimal conduction losses.
  • Fast Switching: Low input capacitance (Ciss = 400pF @ 100V) enables high-frequency operation.
  • Robust Gate Drive: ±25V Vgs(max) tolerance for flexible drive circuitry.
  • Thermal Efficiency: 85W power dissipation (Tc) ensures stable performance under load.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for environmental and handling robustness.

STB10N60M2 Applications

The STB10N60M2 excels in:

  • Switch-Mode Power Supplies (SMPS): High efficiency and fast switching make it ideal for AC-DC converters.
  • Motor Drives: Low Rds(on) and high voltage tolerance suit inverter and H-bridge designs.
  • Lighting Systems: Efficiently drives LED drivers and ballasts.
  • Industrial Power Systems: Used in welding equipment, UPS, and solar inverters.
  • Automotive Applications: Suitable for auxiliary power systems where high voltage and reliability are critical.

Conclusion of STB10N60M2

The STB10N60M2 stands out as a high-efficiency, high-voltage MOSFET with low switching losses and robust thermal performance. Its MDmesh™ II Plus technology ensures superior performance in power conversion applications, while the D2PAK package offers mechanical and thermal advantages. Whether in industrial, automotive, or consumer electronics, this MOSFET delivers reliability, efficiency, and flexibility, making it a top choice for designers prioritizing performance and cost-effectiveness.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB10N60M2 Documents

Download datasheets and manufacturer documentation for STB10N60M2

Ersa STx10N60M2      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa IPG-PWR/14/8422 11/Apr/2014      

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