STMicroelectronics_STB10N60M2
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STMicroelectronics
STB10N60M2

278-STB10N60M2
PDF Datasheet
600V 7.5A N-CH MOSFET D2PAK 600mR
26 Weeks

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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Fall Time
13.2ns
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
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STB10N60M2 Description

STB10N60M2 Description

The STB10N60M2 from STMicroelectronics is a high-performance N-channel 600V, 7.5A power MOSFET designed for demanding switching applications. Part of the MDmesh™ II Plus series, it leverages advanced Metal Oxide (MOSFET) technology to deliver superior efficiency, low conduction losses, and high switching speed. With a low on-resistance (Rds(on)) of 600mΩ at 10V gate drive, it minimizes power dissipation, making it ideal for high-voltage, high-frequency circuits. The device is housed in a D2PAK (TO-263) surface-mount package, ensuring robust thermal performance and compatibility with automated assembly processes.

STB10N60M2 Features

  • High Voltage Rating: 600V Vdss ensures reliability in high-power applications.
  • Low Gate Charge (Qg): 13.5nC @ 10V reduces switching losses, enhancing efficiency.
  • Optimized Rds(on): 600mΩ @ 3A, 10V for minimal conduction losses.
  • Fast Switching: Low input capacitance (Ciss = 400pF @ 100V) enables high-frequency operation.
  • Robust Gate Drive: ±25V Vgs(max) tolerance for flexible drive circuitry.
  • Thermal Efficiency: 85W power dissipation (Tc) ensures stable performance under load.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for environmental and handling robustness.

STB10N60M2 Applications

The STB10N60M2 excels in:

  • Switch-Mode Power Supplies (SMPS): High efficiency and fast switching make it ideal for AC-DC converters.
  • Motor Drives: Low Rds(on) and high voltage tolerance suit inverter and H-bridge designs.
  • Lighting Systems: Efficiently drives LED drivers and ballasts.
  • Industrial Power Systems: Used in welding equipment, UPS, and solar inverters.
  • Automotive Applications: Suitable for auxiliary power systems where high voltage and reliability are critical.

Conclusion of STB10N60M2

The STB10N60M2 stands out as a high-efficiency, high-voltage MOSFET with low switching losses and robust thermal performance. Its MDmesh™ II Plus technology ensures superior performance in power conversion applications, while the D2PAK package offers mechanical and thermal advantages. Whether in industrial, automotive, or consumer electronics, this MOSFET delivers reliability, efficiency, and flexibility, making it a top choice for designers prioritizing performance and cost-effectiveness.

FAQ

What voltage specification is listed for STB10N60M2?
The listed voltage-related specification for STB10N60M2 is 650V.
Is STB10N60M2 currently in stock?
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What is STB10N60M2?
What operating temperature range does STB10N60M2 support?
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