STMicroelectronics_STD10NM60N

STMicroelectronics
STD10NM60N  
Single FETs, MOSFETs

STMicroelectronics
STD10NM60N
278-STD10NM60N
Ersa
STMicroelectronics-STD10NM60N-datasheets-1796573.pdf
MOSFET N-CH 600V 10A DPAK
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    STD10NM60N Description

    STD10NM60N Description

    The STD10NM60N is a high-performance N-Channel MOSFET from STMicroelectronics, designed to deliver exceptional performance in various electronic applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at 25°C, this device is built to handle high-voltage and high-current applications with ease. The STD10NM60N features a low on-resistance (Rds(on)) of 550mOhm at 4A and 10V, ensuring efficient power dissipation and minimal power loss.

    STD10NM60N Features

    • High Voltage and Current Handling: The STD10NM60N can handle a drain-to-source voltage of up to 600V and a continuous drain current of 10A at 25°C, making it suitable for high-voltage and high-current applications.
    • Low On-Resistance: With an Rds(on) of 550mOhm at 4A and 10V, the STD10NM60N offers efficient power dissipation and minimal power loss, ensuring optimal performance in power electronic applications.
    • Surface Mount Technology: The STD10NM60N is designed for surface mount applications, allowing for compact and efficient integration into various electronic devices.
    • Compliance with Industry Standards: The STD10NM60N is compliant with the RoHS3 standard, making it an environmentally friendly choice for electronic devices. It is also REACH unaffected, ensuring compliance with European regulations.
    • Reliability and Durability: With a moisture sensitivity level (MSL) of 1 (unlimited), the STD10NM60N is designed for reliable performance in various environmental conditions.

    STD10NM60N Applications

    The STD10NM60N is ideal for a wide range of applications, including:

    • Power Supplies: Due to its high voltage and current handling capabilities, the STD10NM60N is well-suited for power supply applications, such as switching power supplies and power converters.
    • Motor Control: The low on-resistance and high voltage handling capabilities make the STD10NM60N an excellent choice for motor control applications, including brushless DC motors and stepper motors.
    • Industrial Automation: The STD10NM60N's robust performance and reliability make it suitable for industrial automation applications, such as motor drives and control systems.
    • Automotive Applications: The STD10NM60N can be used in various automotive applications, such as electric vehicle charging systems and power management systems.

    Conclusion of STD10NM60N

    The STD10NM60N from STMicroelectronics is a high-performance N-Channel MOSFET that offers exceptional voltage and current handling capabilities, low on-resistance, and compliance with industry standards. Its unique features and advantages make it an ideal choice for a wide range of applications, including power supplies, motor control, industrial automation, and automotive systems. With its reliable performance and durability, the STD10NM60N is a valuable addition to any electronic design.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD10NM60N Documents

    Download datasheets and manufacturer documentation for STD10NM60N

    Ersa STx10NM60N      
    Ersa Reel Design Change 22/Aug/2022       Box Label Chg 28/Jul/2016      
    Ersa STD10NM60N View All Specifications      
    Ersa New Lead Frame Design 17/Mar/2023      

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