STMicroelectronics

STP34NM60N  

Single FETs, MOSFETs

STP34NM60N Description

The STP34NM60N is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage of 600V and continuous drain current of 29A at 25°C, this device is ideal for various power electronics applications. The STP34NM60N features a low on-resistance of 105mOhm at 14.5A and 10V gate-source voltage, ensuring high efficiency and low power dissipation. Its maximum power dissipation is 250W at case temperature, making it suitable for demanding applications.

STP34NM60N Features

• 600V Drain-to-Source Voltage (Vdss): Provides high voltage handling capability for various power electronics applications.
• 29A Continuous Drain Current (Id) @ 25°C: Offers high current handling for demanding applications.
• Low On-Resistance (Rds On): 105mOhm at 14.5A and 10V, ensuring high efficiency and low power dissipation.
• Maximum Power Dissipation (Pd): 250W at case temperature, suitable for high-power applications.
• Low Gate Charge (Qg): 80nC at 10V, reducing switching losses and improving efficiency.
• Low Input Capacitance (Ciss): 2722pF at 100V, minimizing parasitic effects and improving high-frequency performance.
• Robust Operating Temperature Range: -55°C to 150°C (TJ), making it suitable for a wide range of environments.
• Compliance with RoHS3 and REACH: Ensuring environmental and safety standards are met.

STP34NM60N Applications

The STP34NM60N is ideal for various high-voltage and high-current applications, including:

1. Power Supplies: High-efficiency power conversion and regulation in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
2. Motor Control: Efficient and precise control of electric motors in industrial automation, robotics, and transportation systems.
3. Inverters: High-power inverter applications for renewable energy systems, such as solar and wind power inverters.
4. Battery Management Systems: Efficient battery charging and discharging in electric vehicles (EVs) and energy storage systems.

Conclusion of STP34NM60N

The STP34NM60N from STMicroelectronics is a versatile and high-performance N-channel MOSFET, offering a combination of high voltage, current handling, and low on-resistance. Its unique features, such as low gate charge and input capacitance, make it an excellent choice for high-efficiency power electronics applications. With compliance to RoHS3 and REACH standards, the STP34NM60N is an environmentally friendly solution for demanding applications in power supplies, motor control, inverters, and battery management systems.

STP34NM60N Documents

Download datasheets and manufacturer documentation for STP34NM60N

PCN Assembly/Origin :

IPG-PWR/14/8603 21/Jul/2014      

Datasheets :

STB,P34NM60N      

Other Related Documents :

STP34NM60N View All Specifications      

HTML Datasheet :

STB,P34NM60N