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STMicroelectronics
STB19NM65N
278-STB19NM65N
PDF Datasheet
MOSFET N-Channel 650V 0.25 Ohms 15.5A
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Tech Specifications
Package/Case
D2PAK
Continuous Drain Current (ID)
15.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
650V
Fall Time
26ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.9nF
STB19NM65N Description
N-Channel 650 V 15.5A (Tc) 150W (Tc) Surface Mount D2PAK
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