STMicroelectronics_STP14NM65N

STMicroelectronics
STP14NM65N  
Single FETs, MOSFETs

STMicroelectronics
STP14NM65N
278-STP14NM65N
Ersa
STMicroelectronics-STP14NM65N-datasheets-5514051.pdf
MOSFET N-CH 650V 12A TO220AB
In Stock : 22018

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STP14NM65N Description

STP14NM65N Description

The STP14NM65N from STMicroelectronics is an N-channel 650V, 12A power MOSFET housed in a TO-220AB package, designed for high-voltage switching applications. Part of the MDmesh™ II series, it leverages advanced Metal Oxide Semiconductor (MOSFET) technology to deliver low conduction losses and high efficiency. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 12A (at 25°C case temperature), this device is optimized for robust performance in demanding power circuits. Although marked as obsolete, it remains a reliable choice for legacy designs due to its proven reliability and RoHS3 compliance.

STP14NM65N Features

  • Low On-Resistance: 380mΩ (max) at 6A, 10V gate drive, minimizing power dissipation.
  • High Voltage Tolerance: 650V Vdss rating ensures suitability for industrial and automotive applications.
  • Fast Switching: Gate charge (Qg) of 45nC (max) and input capacitance (Ciss) of 1300pF (max) enable efficient high-frequency operation.
  • Thermal Performance: 125W max power dissipation (Tc) and 150°C junction temperature (TJ) support high-power environments.
  • Robust Gate Drive: ±25V Vgs (max) enhances noise immunity and reliability.
  • MDmesh™ II Technology: Reduces conduction losses and improves switching efficiency compared to standard MOSFETs.

STP14NM65N Applications

  • Switched-Mode Power Supplies (SMPS): Ideal for AC-DC converters, PFC stages, and DC-DC converters due to high voltage handling and low Rds(on).
  • Motor Drives: Suitable for inverters and H-bridge configurations in industrial motor control systems.
  • Lighting: Efficiently drives LED drivers and ballasts in high-voltage lighting applications.
  • Renewable Energy: Used in solar inverters and wind power systems for energy conversion.
  • Automotive Systems: Supports auxiliary power modules and battery management in electric vehicles (EVs).

Conclusion of STP14NM65N

The STP14NM65N offers a balance of high voltage capability, low conduction losses, and thermal resilience, making it a strong candidate for power electronics designs. While obsolete, its MDmesh™ II technology and TO-220AB packaging ensure compatibility with legacy systems requiring dependable high-voltage switching. Engineers in industrial, automotive, and renewable energy sectors may still find value in its performance for specific applications. For new designs, consider STMicroelectronics' newer-generation alternatives with enhanced efficiency.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STP14NM65N Documents

Download datasheets and manufacturer documentation for STP14NM65N

Ersa STx14NM65N      
Ersa STx14NM65N      

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