STMicroelectronics_STB9NK50ZT4

STMicroelectronics
STB9NK50ZT4  
Single FETs, MOSFETs

STMicroelectronics
STB9NK50ZT4
278-STB9NK50ZT4
MOSFET N-CH 500V 7.2A D2PAK
In Stock : 1937

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    STB9NK50ZT4 Description

    STB9NK50ZT4 Description

    The STB9NK50ZT4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 7.2A at 25°C, this device is suitable for a wide range of power electronics applications. The STB9NK50ZT4 is part of the SuperMESH™ series, known for their excellent performance and reliability.

    STB9NK50ZT4 Features

    • High Voltage and Current Handling: The STB9NK50ZT4 can handle a drain-to-source voltage of up to 500V and a continuous drain current of 7.2A at 25°C, making it suitable for high-power applications.
    • Low On-Resistance: The device has a maximum on-resistance (Rds On) of 850mOhm at a drain current of 3.6A and a gate-source voltage of 10V, resulting in lower power dissipation and higher efficiency.
    • Fast Switching Speed: With a maximum gate threshold voltage (Vgs(th)) of 4.5V at 100µA, the STB9NK50ZT4 offers fast switching capabilities, reducing switching losses and improving overall performance.
    • Low Gate Charge: The maximum gate charge (Qg) is 32nC at a gate-source voltage of 10V, which reduces the gate drive power requirements and improves efficiency.
    • Robust Package: The D2PAK package provides excellent thermal performance and mechanical robustness, making it suitable for power electronics applications.
    • Compliance and Environmental: The STB9NK50ZT4 is compliant with RoHS3 and REACH regulations, making it suitable for environmentally conscious designs.

    STB9NK50ZT4 Applications

    The STB9NK50ZT4 is ideal for a variety of power electronics applications, including:

    • Power Supplies: Due to its high voltage and current handling capabilities, the STB9NK50ZT4 is well-suited for power supply designs, such as switch-mode power supplies (SMPS) and power factor correction (PFC) circuits.
    • Motor Drives: The device's low on-resistance and fast switching speed make it suitable for motor drive applications, including brushless DC (BLDC) motors and stepper motors.
    • Industrial Control: The STB9NK50ZT4 can be used in industrial control applications, such as motor control and power distribution systems, where high voltage and current handling are required.
    • Automotive Electronics: The device's robustness and compliance with environmental regulations make it suitable for automotive electronics applications, such as electric vehicle (EV) chargers and power management systems.

    Conclusion of STB9NK50ZT4

    The STB9NK50ZT4 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering excellent voltage and current handling capabilities, low on-resistance, and fast switching speed. Its robust D2PAK package and compliance with environmental regulations make it suitable for a wide range of power electronics applications, including power supplies, motor drives, industrial control, and automotive electronics. With its unique features and advantages over similar models, the STB9NK50ZT4 is an ideal choice for designers looking for a reliable and efficient solution in their power electronics projects.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Tab
    Length
    Forward Transconductance - Min
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STB9NK50ZT4 Documents

    Download datasheets and manufacturer documentation for STB9NK50ZT4

    Ersa ST(B,P)9NK50Z(FP,-1)      
    Ersa STB9NK50Z View All Specifications      
    Ersa ST(B,P)9NK50Z(FP,-1)      
    Ersa IPG-PWR/14/8422 11/Apr/2014      

    Shopping Guide

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