STMicroelectronics_STD9N65M2

STMicroelectronics
STD9N65M2  
Single FETs, MOSFETs

STMicroelectronics
STD9N65M2
278-STD9N65M2
Ersa
STMicroelectronics-STD9N65M2-datasheets-8693247.pdf
MOSFET N-CH 650V 5A DPAK
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STD9N65M2 Description

STD9N65M2 Description

The STD9N65M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current capabilities. This MOSFET features a robust DPAK package, making it suitable for surface mount applications. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 5A at 25°C, the STD9N65M2 is ideal for demanding power electronics applications.

STD9N65M2 Features

  • High Voltage and Current Ratings: The STD9N65M2 boasts a drain-to-source voltage (Vdss) of 650V and can handle a continuous drain current (Id) of 5A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 900mOhm at 2.5A and 10V, the STD9N65M2 offers low conduction losses, improving efficiency in power electronics applications.
  • Fast Switching Speed: The STD9N65M2 has a low gate charge (Qg) of 10nC at 10V, enabling fast switching and reducing switching losses.
  • Robust Package: The DPAK package provides excellent thermal performance and mechanical stability, making it suitable for high-power applications.
  • Wide Operating Temperature Range: The STD9N65M2 operates over a wide temperature range of -55°C to 150°C, ensuring reliable performance in various environmental conditions.
  • Compliance with Industry Standards: The STD9N65M2 is compliant with RoHS3 and REACH regulations, making it suitable for environmentally conscious applications.

STD9N65M2 Applications

The STD9N65M2 is ideal for a wide range of applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STD9N65M2 is well-suited for power supply applications, such as SMPS and DC-DC converters.
  • Motor Control: The low on-resistance and fast switching capabilities make the STD9N65M2 an excellent choice for motor control applications, including brushless DC motors and stepper motors.
  • Industrial Automation: The robustness and high voltage capabilities of the STD9N65M2 make it suitable for industrial automation applications, such as motor drives and power distribution systems.
  • Renewable Energy: The STD9N65M2 can be used in renewable energy applications, such as solar inverters and wind turbine power electronics.

Conclusion of STD9N65M2

The STD9N65M2 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its robust DPAK package and compliance with industry standards make it an ideal choice for a wide range of power electronics applications, including power supplies, motor control, industrial automation, and renewable energy systems. With its unique features and advantages over similar models, the STD9N65M2 is a reliable and efficient solution for demanding power electronics applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD9N65M2 Documents

Download datasheets and manufacturer documentation for STD9N65M2

Ersa Mult Dev Wafer Site Add 3/Aug/2018      
Ersa ST(D,F,P,U)9N65M2      
Ersa ST(D,F,P,U)9N65M2      

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