STMicroelectronics
STD13N60DM2
Single FETs, MOSFETs
STD13N60DM2
278-STD13N60DM2
STMicroelectronics-STD13N60DM2-datasheets-5369357.pdf
MOSFET N-CH 600V 11A DPAK
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STD13N60DM2 Description
The STD13N60DM2 is a high voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and switching regulators.
Description:
The STD13N60DM2 is a surface-mount device that features a drain-source voltage (Vds) of 600V, a continuous drain current (Id) of 11.5A, and a gate-source voltage (Vgs) of -20V to +20V. It is available in a DPak package, which is a plastic package with a flat bottom and gull-wing leads on either side.
Features:
- High voltage operation: The STD13N60DM2 is designed to operate at high voltages, making it suitable for use in power electronic applications.
- Low on-state resistance (Rds(on)): The device has a low on-state resistance, which helps to minimize power dissipation and improve efficiency.
- Fast switching: The STD13N60DM2 has a fast switching time, which makes it suitable for use in high-frequency applications.
- High input impedance: The device has a high input impedance, which allows it to be easily driven by a variety of control circuits.
Applications:
The STD13N60DM2 is commonly used in a variety of power electronic applications, including:
- Motor control: The device can be used to control the speed and direction of motors in applications such as industrial machinery and automotive systems.
- Power supplies: The STD13N60DM2 can be used in power supply circuits to regulate the flow of current and voltage.
- Switching regulators: The device can be used in switching regulator circuits to efficiently convert voltage levels in power supply applications.
- Inverters: The STD13N60DM2 can be used in inverter circuits to convert DC power to AC power for use in a variety of applications.
Overall, the STD13N60DM2 is a versatile and high-performance MOSFET that is well-suited for use in a variety of power electronic applications.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STD13N60DM2 Documents
Download datasheets and manufacturer documentation for STD13N60DM2
Assembly Site 22/Dec/2022 STD13N60DM2 Datasheet Mult Dev Inner Box Chg 9/Dec/2021 STD13N60DM2 Datasheet Related Parts
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