STMicroelectronics_STP19NM50N

STMicroelectronics
STP19NM50N  
Single FETs, MOSFETs

STMicroelectronics
STP19NM50N
278-STP19NM50N
Ersa
STMicroelectronics-STP19NM50N-datasheets-13129719.pdf
MOSFET N-CH 500V 14A TO220AB
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    STP19NM50N Description

    STP19NM50N Description

    The STP19NM50N is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 14A at 25°C, this device is well-suited for a wide range of power electronics applications.

    STP19NM50N Features

    • High Voltage and Current Ratings: The STP19NM50N boasts a drain-to-source voltage (Vdss) of 500V and can handle a continuous drain current (Id) of 14A at 25°C, making it ideal for high-power applications.
    • Low On-State Resistance: With an Rds(on) of just 250mOhm at 7A and 10V, the STP19NM50N offers low conduction losses and high efficiency in power switching applications.
    • Robust Gate Drive: The device features a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation across a wide range of gate drive conditions.
    • Low Gate Charge: The STP19NM50N has a maximum gate charge (Qg) of 34nC at 10V, contributing to fast switching speeds and reduced switching losses.
    • Thermal Performance: With a maximum power dissipation of 110W (Tc) and an operating junction temperature (TJ) of 150°C, this MOSFET is designed for high-temperature operation in power electronics systems.
    • Environmental Compliance: The STP19NM50N is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations and reducing the environmental impact of electronic products.

    STP19NM50N Applications

    The STP19NM50N is an ideal choice for a variety of high-power applications, including:

    • Power Supplies: Its high voltage and current ratings make it suitable for use in power supply designs, where efficient power switching is critical.
    • Motor Control: The low on-state resistance and fast switching capabilities of the STP19NM50N make it well-suited for motor control applications, where precise current control and high efficiency are essential.
    • Industrial Automation: In industrial automation systems, the STP19NM50N can be used for high-power switching and control, providing reliable operation in harsh environments.

    Conclusion of STP19NM50N

    The STP19NM50N from STMicroelectronics is a high-performance N-Channel MOSFET that offers a combination of high voltage and current ratings, low on-state resistance, and robust gate drive capabilities. Its low gate charge, high thermal performance, and environmental compliance make it an excellent choice for a wide range of power electronics applications, including power supplies, motor control, and industrial automation. With its unique features and advantages over similar models, the STP19NM50N is a reliable and efficient solution for demanding power electronics systems.

    Tech Specifications

    Unit Weight
    Configuration
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Channel Mode
    Product Status
    Fall Time
    RoHS
    Drain to Source Voltage (Vdss)
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    FET Type
    Supplier Device Package
    Qg - Gate Charge
    Power Dissipation (Max)
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Pd - Power Dissipation
    Base Product Number
    Supplier Package
    ECCN (US)
    Grade
    ECCN (EU)
    RoHs compliant

    STP19NM50N Documents

    Download datasheets and manufacturer documentation for STP19NM50N

    Ersa STx19NM50N      
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    Ersa STx19NM50N      

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