STMicroelectronics

STP33N60M2  

Single FETs, MOSFETs

STP33N60M2 Description

The STP33N60M2 is a high-performance MOSFET N-CH 600V 26A TO220 from STMicroelectronics. This single FET is designed for demanding applications that require high power dissipation, low on-resistance, and fast switching capabilities. With a maximum drain-source voltage of 600V and a continuous drain current of 26A at 25°C, the STP33N60M2 is well-suited for a wide range of power electronic applications.

STP33N60M2 Features

• High Power Dissipation: The STP33N60M2 can handle a maximum power dissipation of 190W at case temperature, making it ideal for high-power applications.
• Low On-Resistance: With a maximum Rds(on) of 125mOhm at 13A and 10V, the STP33N60M2 offers low conduction losses, improving efficiency in power conversion systems.
• Fast Switching: The device has a maximum gate charge (Qg) of 45.5nC at 10V, enabling fast switching and reducing switching losses.
• Robust Gate Drive: The STP33N60M2 has a maximum gate-source voltage (Vgs) of ±25V, providing robust gate drive capabilities.
• Compliance: The device is compliant with RoHS3 and REACH regulations, making it suitable for environmentally conscious applications.
• Moisture Sensitivity Level (MSL): With an MSL of 1, the STP33N60M2 can be stored for an unlimited time without baking, simplifying logistics and inventory management.

STP33N60M2 Applications

The STP33N60M2 is ideal for a variety of high-power applications, including:

• Power Supplies: The device's high voltage and current ratings make it suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
• Motor Control: The STP33N60M2's low on-resistance and fast switching capabilities make it well-suited for motor control applications, including industrial drives and electric vehicles.
• Renewable Energy: The device's high power dissipation and robust gate drive make it suitable for use in renewable energy systems, such as solar inverters and wind turbines.

Conclusion of STP33N60M2

The STP33N60M2 from STMicroelectronics is a high-performance MOSFET that offers a combination of high power dissipation, low on-resistance, and fast switching capabilities. Its compliance with RoHS3 and REACH regulations, along with its moisture sensitivity level of 1, make it an attractive option for a wide range of power electronic applications. With its robust performance and compliance features, the STP33N60M2 is an excellent choice for demanding applications in power supplies, motor control, and renewable energy systems.

STP33N60M2 Documents

Download datasheets and manufacturer documentation for STP33N60M2

Datasheets :

STx33N60M2      

HTML Datasheet :

STx33N60M2      

PCN Design/Specification :

STx33N60M2 Datasheet Chg 31/May/2019