STMicroelectronics_STF11N65M2

STMicroelectronics
STF11N65M2  
Single FETs, MOSFETs

STMicroelectronics
STF11N65M2
278-STF11N65M2
Ersa
STMicroelectronics-STF11N65M2-datasheets-11636043.pdf
MOSFET N-CH 650V 7A TO220FP
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    STF11N65M2 Description

    STF11N65M2 Description

    The STF11N65M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage rating of 650V and a continuous drain current of 7A at 25°C, this device is well-suited for a variety of power electronics applications.

    STF11N65M2 Features

    • High Voltage Tolerance: The STF11N65M2 can withstand drain-to-source voltages up to 650V, making it ideal for high-voltage applications.
    • Low On-State Resistance: With a maximum Rds(on) of 670mΩ at 3.5A and 10V, this MOSFET offers low conduction losses, improving efficiency in power conversion systems.
    • Low Gate Charge: A maximum gate charge (Qg) of 12.5nC at 10V contributes to faster switching speeds and reduced switching losses.
    • Robust Input Capacitance: The maximum input capacitance (Ciss) of 410pF at 100V ensures stable operation under varying input conditions.
    • Compliance and Environmental Standards: The STF11N65M2 is compliant with RoHS3 and REACH standards, making it suitable for environmentally conscious designs.
    • Reliability: With a moisture sensitivity level (MSL) of 1, this device can be stored and handled without special precautions, enhancing manufacturing flexibility.

    STF11N65M2 Applications

    The STF11N65M2 is particularly well-suited for applications where high voltage and current handling are required, such as:

    • Power Supplies: In switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS), where high efficiency and reliability are critical.
    • Industrial Control: For motor drives and industrial automation systems that demand robust power switching.
    • Automotive Electronics: In electric vehicle (EV) charging systems and other high-voltage automotive applications.
    • Renewable Energy: In solar inverters and wind turbine power conditioning systems, where high voltage and power ratings are essential.

    Conclusion of STF11N65M2

    The STF11N65M2 stands out for its combination of high voltage and current ratings, low on-state resistance, and compliance with environmental standards. Its robust performance makes it an excellent choice for demanding power electronics applications where reliability and efficiency are paramount. With STMicroelectronics' commitment to quality and innovation, the STF11N65M2 is a reliable component for engineers designing the next generation of power electronics solutions.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    Product
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STF11N65M2 Documents

    Download datasheets and manufacturer documentation for STF11N65M2

    Ersa Mult Dev Wafer Site Add 3/Aug/2018      
    Ersa STF(I)11N65M2      
    Ersa STF(I)11N65M2      

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