STMicroelectronics_STU2N62K3
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STMicroelectronics
STU2N62K3

278-STU2N62K3
PDF Datasheet
N-Ch MOSFET, 620V, 3.6R, 2.2A, IPAK, Through Hole
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Tech Specifications

Package/Case
TO-251-3
Continuous Drain Current (ID)
2.2A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
3.6R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
3.6R
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
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STU2N62K3 Description

STU2N62K3 Description

The STU2N62K3 is a high-performance N-channel MOSFET from STMicroelectronics, designed to deliver superior performance in various electronic applications. With a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 2.2A at 25°C, this device is well-suited for demanding power management tasks. Its low on-resistance (Rds On) of 3.6Ω at 1.1A and 10V VGS ensures high efficiency and minimal power loss. The STU2N62K3 is housed in a through-hole IPAK package, making it ideal for applications requiring high thermal dissipation.

STU2N62K3 Features

  • High Voltage and Current Ratings: The STU2N62K3 boasts a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 2.2A at 25°C, making it suitable for high-voltage applications.
  • Low On-Resistance: The device's low on-resistance (Rds On) of 3.6Ω at 1.1A and 10V VGS contributes to high efficiency and minimal power loss.
  • Robust Gate Charge Handling: With a maximum gate charge (Qg) of 15nC at 10V VGS, the STU2N62K3 can handle high gate charge requirements without compromising performance.
  • Thermal Management: The through-hole IPAK package allows for efficient thermal dissipation, making it suitable for high-power applications.
  • Compliance and Environmental: The STU2N62K3 is REACH unaffected, RoHS3 compliant, and has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering.

STU2N62K3 Applications

The STU2N62K3 is ideal for a wide range of applications, including:

  • Power Management: Its high voltage and current ratings make it suitable for power conversion and management in various electronic devices.
  • Industrial Automation: The device's robust performance and thermal management capabilities make it ideal for motor control and industrial automation applications.
  • Automotive: The STU2N62K3 can be used in automotive applications, such as electric vehicle charging systems and powertrain control.
  • Telecommunications: Its high voltage and current ratings make it suitable for power supply and signal processing in telecommunications equipment.

Conclusion of STU2N62K3

The STU2N62K3 from STMicroelectronics is a high-performance N-channel MOSFET that offers superior voltage and current ratings, low on-resistance, and robust gate charge handling. Its through-hole IPAK package ensures efficient thermal dissipation, making it suitable for high-power applications. With its compliance and environmental certifications, the STU2N62K3 is an excellent choice for power management, industrial automation, automotive, and telecommunications applications.

FAQ

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