STMicroelectronics_STU2N62K3

STMicroelectronics
STU2N62K3  
Single FETs, MOSFETs

STMicroelectronics
STU2N62K3
278-STU2N62K3
Ersa
STMicroelectronics-STU2N62K3-datasheets-6882421.pdf
MOSFET N-CH 620V 2.2A IPAK
In Stock : 3000

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STU2N62K3 Description

STU2N62K3 Description

The STU2N62K3 is a high-performance N-channel MOSFET from STMicroelectronics, designed to deliver superior performance in various electronic applications. With a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 2.2A at 25°C, this device is well-suited for demanding power management tasks. Its low on-resistance (Rds On) of 3.6Ω at 1.1A and 10V VGS ensures high efficiency and minimal power loss. The STU2N62K3 is housed in a through-hole IPAK package, making it ideal for applications requiring high thermal dissipation.

STU2N62K3 Features

  • High Voltage and Current Ratings: The STU2N62K3 boasts a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 2.2A at 25°C, making it suitable for high-voltage applications.
  • Low On-Resistance: The device's low on-resistance (Rds On) of 3.6Ω at 1.1A and 10V VGS contributes to high efficiency and minimal power loss.
  • Robust Gate Charge Handling: With a maximum gate charge (Qg) of 15nC at 10V VGS, the STU2N62K3 can handle high gate charge requirements without compromising performance.
  • Thermal Management: The through-hole IPAK package allows for efficient thermal dissipation, making it suitable for high-power applications.
  • Compliance and Environmental: The STU2N62K3 is REACH unaffected, RoHS3 compliant, and has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering.

STU2N62K3 Applications

The STU2N62K3 is ideal for a wide range of applications, including:

  • Power Management: Its high voltage and current ratings make it suitable for power conversion and management in various electronic devices.
  • Industrial Automation: The device's robust performance and thermal management capabilities make it ideal for motor control and industrial automation applications.
  • Automotive: The STU2N62K3 can be used in automotive applications, such as electric vehicle charging systems and powertrain control.
  • Telecommunications: Its high voltage and current ratings make it suitable for power supply and signal processing in telecommunications equipment.

Conclusion of STU2N62K3

The STU2N62K3 from STMicroelectronics is a high-performance N-channel MOSFET that offers superior voltage and current ratings, low on-resistance, and robust gate charge handling. Its through-hole IPAK package ensures efficient thermal dissipation, making it suitable for high-power applications. With its compliance and environmental certifications, the STU2N62K3 is an excellent choice for power management, industrial automation, automotive, and telecommunications applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STU2N62K3 Documents

Download datasheets and manufacturer documentation for STU2N62K3

Ersa STx2N62K3      
Ersa Box Label Chg 28/Jul/2016      
Ersa STU2N62K3 View All Specifications      
Ersa STx2N62K3      

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