STMicroelectronics_STU6N65K3
original

STMicroelectronics
STU6N65K3

278-STU6N65K3
PDF Datasheet
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in IPAK package

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Tech Specifications

Package/Case
TO-251-3
Continuous Drain Current (ID)
5.4A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
650V
Fall Time
24ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
880pF
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STU6N65K3 Description

N-Channel 650 V 5.4A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

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