German
Japanese
Portuguese
Korea
Mexico
Dutch
STMicroelectronics
STU6N65K3
278-STU6N65K3
PDF Datasheet
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in IPAK package
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-251-3
Continuous Drain Current (ID)
5.4A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
650V
Fall Time
24ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
880pF
STU6N65K3 Description
N-Channel 650 V 5.4A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
FAQ
Is STU6N65K3 currently in stock?
STU6N65K3 is currently available on an inquiry basis. Please contact us for the latest stock information.
What package or case is STU6N65K3 available in?
What is STU6N65K3?
What operating temperature range does STU6N65K3 support?
What voltage specification is listed for STU6N65K3?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
