STMicroelectronics

SCTWA35N65G2V

SCTWA35N65G2V Description

The SCTWA35N65G2V is a high-performance Silicon Carbide Field-Effect Transistor (SiCFET) manufactured by STMicroelectronics. This Single FET, MOSFET is designed for applications requiring high voltage and current capabilities. With a drain to source voltage (Vdss) of 650V and a continuous drain current (Id) of 45A at 25°C, the SCTWA35N65G2V is well-suited for demanding power electronics applications.

SCTWA35N65G2V Features

• High Voltage and Current Ratings: The SCTWA35N65G2V boasts a drain to source voltage (Vdss) of 650V and a continuous drain current (Id) of 45A at 25°C, making it ideal for high-power applications.
• Low On-Resistance: The SCTWA35N65G2V has a maximum Rds On of 72mOhm at 20A and 20V, contributing to high efficiency and low power loss in applications.
• Silicon Carbide Technology: Utilizing SiCFET technology, the SCTWA35N65G2V offers superior thermal performance and faster switching speeds compared to traditional silicon-based MOSFETs.
• Robustness: With a moisture sensitivity level (MSL) of 1 (unlimited), the SCTWA35N65G2V is highly resistant to moisture-induced degradation, ensuring long-term reliability in harsh environments.
• Compliance: The SCTWA35N65G2V is REACH unaffected and RoHS3 compliant, making it suitable for use in environmentally conscious applications.

SCTWA35N65G2V Applications

The SCTWA35N65G2V is ideal for a variety of high-power applications, including:

• Power Supplies: Due to its high voltage and current ratings, the SCTWA35N65G2V is well-suited for use in power supply designs, particularly those requiring high efficiency and low power loss.
• Industrial Automation: The SCTWA35N65G2V's robustness and high power capabilities make it an excellent choice for motor drives and other industrial automation applications.
• Electric Vehicles: The SCTWA35N65G2V's high voltage and current ratings, combined with its fast switching speeds, make it ideal for use in electric vehicle (EV) charging systems and power electronics.

Conclusion of SCTWA35N65G2V

The SCTWA35N65G2V from STMicroelectronics is a high-performance SiCFET that offers a unique combination of high voltage and current ratings, low on-resistance, and robustness. Its use of Silicon Carbide technology provides superior thermal performance and faster switching speeds compared to traditional silicon-based MOSFETs. The SCTWA35N65G2V is well-suited for a variety of high-power applications, including power supplies, industrial automation, and electric vehicles. Its compliance with REACH and RoHS3 standards further enhances its appeal for environmentally conscious applications.