STMicroelectronics_STF10N65K3

STMicroelectronics
STF10N65K3  
Single FETs, MOSFETs

STMicroelectronics
STF10N65K3
278-STF10N65K3
Ersa
STMicroelectronics-STF10N65K3-datasheets-326896.pdf
MOSFET N-CH 650V 10A TO220FP
In Stock : 3000

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STF10N65K3 Description

STF10N65K3 Description

The STF10N65K3 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain to source voltage (Vdss) of 650V and a continuous drain current (Id) of 10A at 25°C, this N-Channel device is well-suited for a variety of power electronics applications.

STF10N65K3 Features

  • High Voltage and Current Ratings: The STF10N65K3 boasts a drain to source voltage (Vdss) of 650V and can handle a continuous drain current (Id) of 10A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 1Ω at 3.6A and 10V, this MOSFET offers low conduction losses, improving efficiency in power conversion systems.
  • Fast Switching: The device features a gate charge (Qg) of 42nC at 10V and a threshold voltage (Vgs(th)) of 4.5V at 100µA, enabling fast switching and reducing switching losses.
  • Robust Construction: Packaged in a TO220FP through-hole package, the STF10N65K3 is designed for reliable operation in harsh environments.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

STF10N65K3 Applications

  • Power Supplies: Ideal for use in switch-mode power supplies (SMPS) due to its high voltage and current ratings, as well as low on-resistance.
  • Motor Controls: The STF10N65K3's fast switching capabilities make it suitable for motor control applications, where precise control of motor speed and torque is required.
  • Industrial Automation: The device's robust construction and high power handling capabilities make it well-suited for use in industrial automation systems, such as motor drives and robotics.
  • Renewable Energy: The STF10N65K3 can be used in solar inverters and wind power converters, where high voltage and current ratings are essential.

Conclusion of STF10N65K3

The STF10N65K3 from STMicroelectronics is a versatile and high-performance MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its robust construction and environmental compliance make it an ideal choice for a wide range of power electronics applications, including power supplies, motor controls, industrial automation, and renewable energy systems. With its unique features and advantages over similar models, the STF10N65K3 is a reliable and efficient solution for demanding power electronic applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF10N65K3 Documents

Download datasheets and manufacturer documentation for STF10N65K3

Ersa Product / Process Change Notification (PDF)       Product Change Notification 2024-04-02 (PDF)      

Shopping Guide

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