The STB5N52K3 from STMicroelectronics is an N-channel SuperMESH3™ power MOSFET designed for high-voltage applications, featuring a 525V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.4A at 25°C (Tc). This surface-mount device is housed in a D2PAK package, ensuring robust thermal performance with a maximum power dissipation of 70W. Although marked as obsolete, it remains a reliable choice for legacy designs requiring high efficiency and low conduction losses.
The STB5N52K3 offers a balance of high voltage capability, low conduction losses, and thermal stability, making it a strong candidate for power electronics despite its obsolete status. Its SuperMESH3™ technology ensures superior performance in switching applications, while the D2PAK package provides mechanical and thermal reliability. Engineers working on legacy or cost-sensitive high-voltage designs will find this MOSFET a dependable solution.
Download datasheets and manufacturer documentation for STB5N52K3