STMicroelectronics

STB5N52K3

STB5N52K3 Description

The STB5N52K3 from STMicroelectronics is an N-channel SuperMESH3™ power MOSFET designed for high-voltage applications, featuring a 525V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.4A at 25°C (Tc). This surface-mount device is housed in a D2PAK package, ensuring robust thermal performance with a maximum power dissipation of 70W. Although marked as obsolete, it remains a reliable choice for legacy designs requiring high efficiency and low conduction losses.

STB5N52K3 Features

• Low On-Resistance: 1.5Ω @ 2.2A, 10V (Rds(on)), minimizing power losses in switching applications.
• Fast Switching Performance: Gate charge (Qg) of 17nC @ 10V and input capacitance (Ciss) of 545pF @ 100V, enabling efficient high-frequency operation.
• High Voltage Tolerance: 525V Vdss with a gate-source voltage (Vgs) range of ±30V, suitable for demanding power circuits.
• Reliable Construction: ROHS3 compliant and REACH unaffected, meeting environmental standards.
• Thermal Efficiency: 70W power dissipation (Tc) ensures stable operation under high loads.

STB5N52K3 Applications

• Switching Power Supplies: Ideal for AC-DC converters and SMPS due to high voltage handling and low Rds(on).
• Motor Control: Efficiently drives brushless DC motors in industrial and automotive systems.
• Lighting Systems: Used in LED drivers and ballast controllers for high-efficiency performance.
• Energy Management: Suitable for solar inverters and battery protection circuits requiring robust voltage tolerance.

Conclusion of STB5N52K3

The STB5N52K3 offers a balance of high voltage capability, low conduction losses, and thermal stability, making it a strong candidate for power electronics despite its obsolete status. Its SuperMESH3™ technology ensures superior performance in switching applications, while the D2PAK package provides mechanical and thermal reliability. Engineers working on legacy or cost-sensitive high-voltage designs will find this MOSFET a dependable solution.