STMicroelectronics_STB5N52K3

STMicroelectronics
STB5N52K3  
Single FETs, MOSFETs

STMicroelectronics
STB5N52K3
278-STB5N52K3
Ersa
STMicroelectronics-STB5N52K3-datasheets-11789744.pdf
MOSFET N-CH 525V 4.4A D2PAK
In Stock : 6002

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STB5N52K3 Description

STB5N52K3 Description

The STB5N52K3 from STMicroelectronics is an N-channel SuperMESH3™ power MOSFET designed for high-voltage applications, featuring a 525V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.4A at 25°C (Tc). This surface-mount device is housed in a D2PAK package, ensuring robust thermal performance with a maximum power dissipation of 70W. Although marked as obsolete, it remains a reliable choice for legacy designs requiring high efficiency and low conduction losses.

STB5N52K3 Features

  • Low On-Resistance: 1.5Ω @ 2.2A, 10V (Rds(on)), minimizing power losses in switching applications.
  • Fast Switching Performance: Gate charge (Qg) of 17nC @ 10V and input capacitance (Ciss) of 545pF @ 100V, enabling efficient high-frequency operation.
  • High Voltage Tolerance: 525V Vdss with a gate-source voltage (Vgs) range of ±30V, suitable for demanding power circuits.
  • Reliable Construction: ROHS3 compliant and REACH unaffected, meeting environmental standards.
  • Thermal Efficiency: 70W power dissipation (Tc) ensures stable operation under high loads.

STB5N52K3 Applications

  • Switching Power Supplies: Ideal for AC-DC converters and SMPS due to high voltage handling and low Rds(on).
  • Motor Control: Efficiently drives brushless DC motors in industrial and automotive systems.
  • Lighting Systems: Used in LED drivers and ballast controllers for high-efficiency performance.
  • Energy Management: Suitable for solar inverters and battery protection circuits requiring robust voltage tolerance.

Conclusion of STB5N52K3

The STB5N52K3 offers a balance of high voltage capability, low conduction losses, and thermal stability, making it a strong candidate for power electronics despite its obsolete status. Its SuperMESH3™ technology ensures superior performance in switching applications, while the D2PAK package provides mechanical and thermal reliability. Engineers working on legacy or cost-sensitive high-voltage designs will find this MOSFET a dependable solution.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Package Width
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)

STB5N52K3 Documents

Download datasheets and manufacturer documentation for STB5N52K3

Ersa STB,STD,STF,STP,STU5N52K3      
Ersa STB,STD,STF,STP,STU5N52K3      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

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