STMicroelectronics_STU6N62K3
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STMicroelectronics
STU6N62K3

278-STU6N62K3
PDF Datasheet
620V 5.5A N-CH MOSFET, 1.28 Ohm, IPAK, Through Hole
13 Weeks

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Tech Specifications

Package/Case
TO-251
Continuous Drain Current (ID)
5.5A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
1.28R
Drain to Source Voltage (Vdss)
620V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
6.9mm
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STU6N62K3 Description

N-Channel 620 V 5.5A (Tc) 90W (Tc) Through Hole TO-251 (IPAK)

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