STMicroelectronics

STP23N80K5

STP23N80K5 Description

The STP23N80K5 is a high-performance MOSFET (Metal Oxide) device from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. It features a drain-to-source voltage (Vdss) of 800V and can handle continuous drain current (Id) of up to 16A at 25°C. With a maximum power dissipation of 190W at case temperature (Tc), this device is well-suited for high-power applications.

STP23N80K5 Features

• High Voltage Capability: The STP23N80K5 can withstand drain-to-source voltages up to 800V, making it ideal for high-voltage applications.
• Low On-Resistance: With an Rds(on) of just 280mOhm at 8A and 10V, this MOSFET offers low conduction losses, improving efficiency in power applications.
• Robust Gate Charge: The maximum gate charge (Qg) is 33nC at 10V, ensuring fast switching and minimal power loss during transitions.
• Wide Operating Temperature: The device is designed to operate over a wide temperature range, enhancing its reliability in various environmental conditions.
• Compliance and Standards: The STP23N80K5 is compliant with REACH regulations and RoHS3 standards, ensuring environmental and health safety in manufacturing and usage.
• Package and Mounting: The device is available in a through-hole TO220-3 package, facilitating easy integration into existing designs.

STP23N80K5 Applications

The STP23N80K5 is well-suited for a variety of high-power applications due to its combination of high voltage, low on-resistance, and robust performance:

• Power Supplies: Its high voltage and current ratings make it ideal for power supply designs, particularly in industrial and automotive applications.
• Motor Controls: The low on-resistance and high current capability are beneficial in motor control applications, ensuring efficient operation and reduced power loss.
• Industrial Automation: The STP23N80K5's robustness and compliance with safety standards make it a reliable choice for industrial automation systems.
• RF Power Amplifiers: In telecommunications, this MOSFET can be used in RF power amplifiers, where high voltage and efficient switching are crucial.

Conclusion of STP23N80K5

The STP23N80K5 from STMicroelectronics stands out for its high-voltage and low on-resistance capabilities, making it an excellent choice for demanding power applications. Its compliance with environmental and safety standards, along with its robust performance, positions it as a reliable component in various industries. Whether in power supplies, motor controls, or industrial automation, the STP23N80K5 delivers efficient and reliable performance, ensuring the success of your high-power electronic designs.