STMicroelectronics_STF20N95K5
original

STMicroelectronics
STF20N95K5

278-STF20N95K5
PDF Datasheet
950V N-CH MOSFET, 17.5A, 330mR Rds(on), TO-220FP
14 Weeks

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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
17.5A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
330mR
Drain to Source Voltage (Vdss)
950V
Drain-source On Resistance-Max
330MR
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
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STF20N95K5 Description

The STF20N95K5 is a high voltage N-channel MOSFET from STMicroelectronics. It is designed for use in a variety of applications, including motor control, power supplies, and power conversion systems.

Description:

The STF20N95K5 is a high voltage N-channel MOSFET with a drain-source voltage (VDS) of 900V and a continuous drain current (ID) of 5.3A. It features a low on-state resistance (RDS(on)) of 0.05 ohms maximum at a gate-source voltage (VGS) of 10V, which helps to reduce power dissipation and improve efficiency.

Features:

  • High voltage N-channel MOSFET
  • VDS of 900V
  • ID of 5.3A (continuous)
  • Low on-state resistance (RDS(on)) of 0.05 ohms maximum at VGS of 10V
  • High input impedance
  • Low gate charge
  • Avalanche energy capable

Applications:

The STF20N95K5 is suitable for use in a variety of applications, including:

  • Motor control
  • Power supplies
  • Power conversion systems
  • Inverters
  • Battery management systems
  • Industrial control systems

In summary, the STF20N95K5 is a high voltage N-channel MOSFET that offers high performance and reliability in a variety of applications. Its low on-state resistance and high input impedance make it an ideal choice for power switching and motor control applications, while its avalanche energy capability ensures robustness and durability in demanding environments.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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