The STL8N80K5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using SuperMESH5™ technology, it offers an impressive 800V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C (case temperature). With a low on-resistance (Rds(on)) of 950mΩ at 10V gate drive, this MOSFET ensures efficient power handling while minimizing conduction losses. The device is housed in a compact PowerFlat™ (5x6) surface-mount package, making it ideal for space-constrained designs.
This MOSFET excels in high-voltage, medium-power applications, including:
The STL8N80K5 combines high voltage capability, low conduction losses, and compact packaging, making it a superior choice for power electronics designers. Its SuperMESH5™ technology ensures reliability in high-stress environments, while its surface-mount PowerFlat™ package enables high-density PCB layouts. Whether used in SMPS, PFC, or motor drives, this MOSFET delivers efficiency, durability, and performance, meeting the demands of modern power systems.
Download datasheets and manufacturer documentation for STL8N80K5