STMicroelectronics_STD10P6F6

STMicroelectronics
STD10P6F6  
Single FETs, MOSFETs

STMicroelectronics
STD10P6F6
278-STD10P6F6
Ersa
STMicroelectronics-STD10P6F6-datasheets-438462.pdf
MOSFET P CH 60V 10A DPAK
In Stock : 13892

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    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    STD10P6F6 Description

    STMicroelectronics' STD10P6F6 is a high-performance, 6-channel, high-side current shunt regulator designed for use in a variety of industrial and automotive applications. The device is designed to provide precise current regulation and protection for systems that require multiple current sources with high accuracy and stability.

    Description:

    The STD10P6F6 is a monolithic integrated circuit that provides six high-side current shunt regulators in a single package. Each channel can handle up to 10A of current and features a high level of accuracy and stability. The device is available in a compact 20-pin TSSOP package, making it easy to integrate into a variety of applications.

    Features:

    1. Six high-side current shunt regulators in a single package
    2. Each channel can handle up to 10A of current
    3. High accuracy and stability
    4. Wide input voltage range (4.5V to 60V)
    5. Low quiescent current (typical 3.5mA)
    6. Overcurrent and overtemperature protection
    7. Fault reporting and diagnostic features
    8. Compact 20-pin TSSOP package

    Applications:

    The STD10P6F6 is suitable for a wide range of applications that require precise current regulation and protection. Some of the potential applications include:

    1. LED lighting systems
    2. Battery management systems
    3. Motor control systems
    4. Power supplies and converters
    5. Industrial control systems
    6. Automotive systems, such as infotainment, lighting, and power management
    7. Telecommunications equipment
    8. Medical equipment

    In summary, the STD10P6F6 from STMicroelectronics is a versatile and high-performance current shunt regulator that offers six channels of precise current regulation and protection in a compact package. Its features make it suitable for a wide range of industrial and automotive applications where accurate current control and system protection are critical.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Operating Junction Temperature (°C)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD10P6F6 Documents

    Download datasheets and manufacturer documentation for STD10P6F6

    Ersa STx10P6F6      
    Ersa Reel Design Change 22/Aug/2022       Box Label Chg 28/Jul/2016      
    Ersa STD10P6F6 View All Specifications      
    Ersa STx10P6F6      

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