STMicroelectronics
STF14N80K5  
Single FETs, MOSFETs

STMicroelectronics
STF14N80K5
278-STF14N80K5
Ersa
STMicroelectronics-STF14N80K5-datasheets-3193773.pdf
MOSFET N-CH 800V 12A TO220FP
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STF14N80K5 Description

STF14N80K5 Description

The STF14N80K5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current capabilities. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 12A at 25°C, this device is well-suited for demanding power electronics applications. The STF14N80K5 features a low on-resistance (Rds On) of 445mOhm at 6A and 10V, ensuring efficient power dissipation and minimal power loss. The device is mounted through hole and packaged in a TO220FP tube, making it suitable for a wide range of applications.

STF14N80K5 Features

  • High drain-to-source voltage (Vdss) of 800V for reliable operation in high-voltage applications
  • Continuous drain current (Id) of 12A at 25°C for efficient power handling
  • Low on-resistance (Rds On) of 445mOhm at 6A and 10V for minimal power loss
  • Through hole mounting and TO220FP tube packaging for compatibility with various applications
  • Active product status and REACH unaffected, ensuring ongoing availability and compliance with environmental regulations
  • RoHS3 compliant, making it suitable for use in environmentally friendly products
  • Moisture Sensitivity Level (MSL) of 1, allowing for unlimited storage time without baking
  • Drive voltage (Max Rds On, Min Rds On) of 10V for easy integration into existing designs

STF14N80K5 Applications

The STF14N80K5 is ideal for a variety of high-voltage and high-current applications, including:

  1. Power supplies and power conversion systems, where high voltage and current handling capabilities are required
  2. Motor control and drives, where efficient power dissipation and low on-resistance are essential for performance
  3. Renewable energy systems, such as solar inverters and wind turbines, where reliability and efficiency are critical
  4. Industrial automation and control systems, where high voltage and current capabilities are necessary for robust operation

Conclusion of STF14N80K5

The STF14N80K5 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current capabilities, low on-resistance, and reliable operation in demanding applications. Its unique features, such as high Vdss, low Rds On, and RoHS3 compliance, make it an ideal choice for power supplies, motor control, renewable energy systems, and industrial automation applications. With its active product status and REACH unaffected status, the STF14N80K5 is a reliable and environmentally friendly solution for high-voltage and high-current electronics designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STF14N80K5 Documents

Download datasheets and manufacturer documentation for STF14N80K5

Ersa STF(I)14N80K5       Spice Model Tutorial for Power MOSFETS       ST-MOSFET-Finder Brief      
Ersa Spice Model Tutorial for Power MOSFETS       ST-MOSFET-Finder Brief      

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