STMicroelectronics_STW23N80K5

STMicroelectronics
STW23N80K5  
Single FETs, MOSFETs

STMicroelectronics
STW23N80K5
278-STW23N80K5
Ersa
STMicroelectronics-STW23N80K5-datasheets-4004331.pdf
MOSFET N-CH 800V 16A TO247
In Stock : 5006

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STW23N80K5 Description

STW23N80K5 Description

The STW23N80K5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed to deliver exceptional performance in demanding applications. This N-CH device features a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 16A at 25°C, making it suitable for high-voltage and high-current applications. With a maximum power dissipation of 190W and a low Rds On of 280mOhm at 8A and 10V, the STW23N80K5 offers efficient power management and reduced power loss.

STW23N80K5 Features

  • High Voltage and Current Ratings: The STW23N80K5 boasts an impressive 800V drain-to-source voltage and 16A continuous drain current, making it ideal for high-voltage and high-current applications.
  • Low Rds On: With a maximum Rds On of 280mOhm at 8A and 10V, the STW23N80K5 provides efficient power management and reduced power loss.
  • High Power Dissipation: Capable of dissipating up to 190W, the STW23N80K5 is designed for high-power applications.
  • Robust Gate Charge and Input Capacitance: The device features a maximum gate charge (Qg) of 33nC at 10V and an input capacitance (Ciss) of 1000pF at 100V, ensuring reliable operation.
  • Compliance with Industry Standards: The STW23N80K5 is compliant with RoHS3 and REACH standards, making it suitable for environmentally conscious applications.
  • Through Hole Mounting: The device is available in a through-hole mounting package, providing flexibility in design and ease of installation.

STW23N80K5 Applications

The STW23N80K5 is ideal for a wide range of applications, including:

  • Industrial Control Systems: Due to its high voltage and current ratings, the STW23N80K5 is well-suited for industrial control systems that require high power and voltage handling capabilities.
  • Power Supplies: The device's low Rds On and high power dissipation make it an excellent choice for power supply applications, where efficiency and heat management are critical.
  • Automotive Electronics: The STW23N80K5's high voltage and current ratings, combined with its robustness, make it suitable for automotive electronics, such as electric vehicle charging systems and power management.
  • Renewable Energy Systems: The device's high voltage and current capabilities make it ideal for renewable energy systems, such as solar inverters and wind power converters.

Conclusion of STW23N80K5

The STW23N80K5 from STMicroelectronics is a powerful MOSFET designed for high-voltage and high-current applications. Its unique combination of high voltage and current ratings, low Rds On, and compliance with industry standards make it an excellent choice for a wide range of applications, including industrial control systems, power supplies, automotive electronics, and renewable energy systems. With its robust performance and flexibility in design, the STW23N80K5 is a reliable and efficient solution for demanding electronic applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STW23N80K5 Documents

Download datasheets and manufacturer documentation for STW23N80K5

Ersa Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

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