STMicroelectronics_STP4NK80ZFP

STMicroelectronics
STP4NK80ZFP  
Single FETs, MOSFETs

STMicroelectronics
STP4NK80ZFP
278-STP4NK80ZFP
Ersa
STMicroelectronics-STP4NK80ZFP-datasheets-4695284.pdf
MOSFET N-CH 800V 3A TO220FP
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    STP4NK80ZFP Description

    The STP4NK80ZFP is a high voltage, high power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

    Description:

    The STP4NK80ZFP is a N-channel MOSFET with a drain-source voltage (VDS) of 800V and a continuous drain current (ID) of 4A. It features a low on-state resistance (RDS(on)) of 75mΩ, which helps to minimize power losses and improve efficiency in high current applications. The device is available in a PowerFLAT 5x6 package, which provides excellent thermal performance and ease of use in a wide range of applications.

    Features:

    1. High voltage and current handling capability: The STP4NK80ZFP is designed to handle high voltages and currents, making it suitable for use in a variety of power electronic applications.
    2. Low on-state resistance: The low RDS(on) of the device helps to minimize power losses and improve efficiency in high current applications.
    3. High switching speed: The MOSFET has a fast switching speed, which allows it to operate efficiently in high-frequency applications.
    4. Robust protection features: The device includes built-in protection features such as over-voltage, over-current, and over-temperature protection, which help to ensure reliable operation in demanding applications.
    5. Compact package: The PowerFLAT 5x6 package provides excellent thermal performance and ease of use in a wide range of applications.

    Applications:

    The STP4NK80ZFP is suitable for use in a variety of power electronic applications, including:

    1. Motor control: The device can be used in motor control applications, such as in industrial automation and robotics, where high voltage and current handling capabilities are required.
    2. Power supplies: The MOSFET can be used in power supply applications, such as in switching power supplies and battery chargers, where high efficiency and fast switching speeds are important.
    3. Renewable energy systems: The STP4NK80ZFP can be used in renewable energy systems, such as solar inverters and wind turbine converters, where high voltage and current handling capabilities are required.
    4. Electric vehicles: The device can be used in electric vehicle applications, such as in the powertrain and charging systems, where high efficiency and robust protection features are important.
    5. Industrial control: The MOSFET can be used in industrial control applications, such as in variable frequency drives and servo motor controllers, where high voltage and current handling capabilities are required.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP4NK80ZFP Documents

    Download datasheets and manufacturer documentation for STP4NK80ZFP

    Ersa ST(D,P)4NK80Z(-1,FP)      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STB6NK90Z View All Specifications      
    Ersa ST(D,P)4NK80Z(-1,FP)      

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