STMicroelectronics
STL6P3LLH6  
Single FETs, MOSFETs

STMicroelectronics
STL6P3LLH6
278-STL6P3LLH6
Ersa
STMicroelectronics-STL6P3LLH6-datasheets-2420556.pdf
MOSFET P-CH 30V 6A POWERFLAT
In Stock : 48271

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STL6P3LLH6 Description

STL6P3LLH6 Description

The STL6P3LLH6 from STMicroelectronics is a high-performance P-channel MOSFET designed for power management applications. Part of the STripFET™ H6 series, it features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C, making it suitable for medium-power switching tasks. Packaged in a compact PowerFlat™ (3.3x3.3), this surface-mount device offers excellent thermal performance with a maximum power dissipation of 2.9W (Tc). Its low Rds(on) of 30mOhm at 3A, 10V ensures minimal conduction losses, while the ±20V gate-to-source voltage (Vgs) tolerance provides robust gate drive flexibility.

STL6P3LLH6 Features

  • Low Gate Charge (Qg): 12nC at 4.5V reduces switching losses, enhancing efficiency in high-frequency applications.
  • Fast Switching: Optimized input capacitance (1450pF at 25V) ensures rapid turn-on/off transitions.
  • High Reliability: ROHS3 compliant and REACH unaffected, with a moisture sensitivity level (MSL) of 1 (unlimited) for extended shelf life.
  • Wide Operating Temperature: 150°C (TJ) rating ensures stable performance in demanding environments.
  • Compact Footprint: PowerFlat™ package saves board space while improving thermal dissipation.

STL6P3LLH6 Applications

This MOSFET is ideal for:

  • DC-DC Converters: Efficient power conversion in portable devices and industrial systems.
  • Load Switching: Low-loss power distribution in battery management systems (BMS).
  • Motor Control: Compact driver solutions for automotive and robotics applications.
  • Power Supplies: High-efficiency designs for telecom and computing infrastructure.

Conclusion of STL6P3LLH6

The STL6P3LLH6 combines low Rds(on), fast switching, and compact packaging, making it a standout choice for power-efficient designs. Its high current handling, robust thermal performance, and industry-compliant certifications ensure reliability in diverse applications. Engineers seeking a space-saving, high-performance P-channel MOSFET will find this device exceptionally well-suited for modern power electronics challenges.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Rise Time
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL6P3LLH6 Documents

Download datasheets and manufacturer documentation for STL6P3LLH6

Ersa Product Change Notification (PDF)       PRODUCT / PROCESS CHANGE INFORMATION (PDF)      
Ersa STL6P3LLH6 Symbol & Footprint by SnapMagic      

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