The STB11NK50ZT4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current capabilities. It features a D2PAK package, making it suitable for surface mount applications. With a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 10A at 25°C, this MOSFET is ideal for demanding power electronics applications.
STB11NK50ZT4 Features
High Voltage and Current Ratings: The STB11NK50ZT4 boasts a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 10A at 25°C, making it suitable for high-power applications.
Low On-Resistance: With a maximum Rds(on) of 520mOhm at 4.5A and 10V, this MOSFET offers low power dissipation and high efficiency.
Fast Switching Speed: The STB11NK50ZT4 has a low gate charge (Qg) of 68nC at 10V, enabling fast switching and reducing switching losses.
Robust Package: The D2PAK package provides excellent thermal performance and mechanical robustness, making it suitable for high-power applications.
Compliance with Regulations: The STB11NK50ZT4 is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring compliance with environmental and trade regulations.
STB11NK50ZT4 Applications
The STB11NK50ZT4 is ideal for a variety of high-power applications, including:
Power Supplies: Its high voltage and current ratings make it suitable for use in power supply designs, such as switching power supplies and battery chargers.
Motor Control: The STB11NK50ZT4's low on-resistance and fast switching speed make it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
Industrial Automation: Its robust package and high power ratings make it suitable for use in industrial automation equipment, such as servo drives and robotic systems.
Renewable Energy: The STB11NK50ZT4 can be used in renewable energy applications, such as solar inverters and wind power converters, due to its high voltage and current capabilities.
Conclusion of STB11NK50ZT4
The STB11NK50ZT4 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage, current, and power ratings, low on-resistance, and fast switching speed. Its robust D2PAK package and compliance with environmental and trade regulations make it an ideal choice for a wide range of high-power applications, including power supplies, motor control, industrial automation, and renewable energy systems.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STB11NK50ZT4 Documents
Download datasheets and manufacturer documentation for STB11NK50ZT4
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Shipping Rate
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