The STWA48N60M2 from STMicroelectronics is a high-performance N-channel 600V MOSFET designed for demanding power applications. Part of the MDmesh™ series, it combines low on-resistance (70mΩ @ 21A, 10V) with high current handling (42A continuous drain current @ 25°C) and robust thermal performance (300W max power dissipation). Its TO-247 package ensures efficient heat dissipation, making it suitable for high-power designs. The device features a gate charge (Qg) of 70nC @ 10V and an input capacitance (Ciss) of 3060pF @ 100V, optimizing switching efficiency. With a Vgs(max) of ±25V and a threshold voltage (Vgs(th)) of 4V @ 250µA, it offers reliable gate control and compatibility with standard drive circuits.
The STWA48N60M2 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its low on-resistance, high current capacity, and advanced MDmesh™ technology make it a superior choice for applications requiring robust performance and thermal stability. Whether in industrial motor drives, renewable energy systems, or power supplies, this device delivers optimal efficiency and durability, backed by STMicroelectronics' proven quality.
Download datasheets and manufacturer documentation for STWA48N60M2