STMicroelectronics_STFU18N65M2

STMicroelectronics
STFU18N65M2  
Single FETs, MOSFETs

STMicroelectronics
STFU18N65M2
278-STFU18N65M2
Ersa
STMicroelectronics-STFU18N65M2-datasheets-9435556.pdf
MOSFET N-CH 650V 12A TO220FP
In Stock : 925

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STFU18N65M2 Description

STFU18N65M2 Description

The STFU18N65M2 is a high-performance MOSFET N-CH 650V 12A TO220FP from STMicroelectronics, designed for demanding applications in the electronics industry. This device offers a unique combination of high voltage and current capabilities, making it ideal for a wide range of applications.

STFU18N65M2 Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
  • Drain to Source Voltage (Vdss): 650V - Suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc) - Capable of handling high current loads.
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V - Offers low on-resistance for efficient power management.
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V - Minimizes switching losses and improves efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V - Reduces parasitic effects and enhances performance.
  • Vgs (Max): ±25V - Allows for a wide range of gate voltages.
  • Drive Voltage (Max Rds On, Min Rds On): 10V - Simplifies the design of driving circuits.
  • Mounting Type: Through Hole - Facilitates easy integration into existing designs.
  • Package: Tube - Provides protection and ease of handling during manufacturing.

STFU18N65M2 Applications

The STFU18N65M2 is ideal for applications that require high voltage and current capabilities, such as:

  • Power Supplies: Due to its high voltage and current ratings, it is well-suited for power supply designs.
  • Motor Controls: Its low on-resistance and high current capabilities make it an excellent choice for motor control applications.
  • Industrial Automation: The device's robustness and performance make it suitable for industrial automation systems.
  • Automotive Electronics: The STFU18N65M2 can be used in various automotive electronics applications, such as electric power steering and battery management systems.

Conclusion of STFU18N65M2

The STFU18N65M2 from STMicroelectronics is a powerful MOSFET that offers a unique combination of high voltage, current, and low on-resistance. Its robust performance and wide range of applications make it an excellent choice for demanding electronics designs. With its unique features and advantages over similar models, the STFU18N65M2 is poised to deliver exceptional performance in a variety of applications.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Channel Mode
Product Status
Supplier Device Package
RoHS
Qg - Gate Charge
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Tradename
Package / Case
Number of Channels
Technology
REACH Status
Mfr
Vgs (Max)
Maximum Operating Temperature
Rds On - Drain-Source Resistance
RoHS Status
Moisture Sensitivity Level (MSL)
Mounting Style
Operating Temperature
FET Feature
Vgs - Gate-Source Voltage
ECCN
Transistor Polarity
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Pd - Power Dissipation
USHTS
Base Product Number
Supplier Package
ECCN (US)
Grade
ECCN (EU)
RoHs compliant

STFU18N65M2 Documents

Download datasheets and manufacturer documentation for STFU18N65M2

Ersa Mult Dev Wafer Site Add 3/Aug/2018      
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Shopping Guide

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