STMicroelectronics_STF20N90K5

STMicroelectronics
STF20N90K5  
Single FETs, MOSFETs

STMicroelectronics
STF20N90K5
278-STF20N90K5
Ersa
STMicroelectronics-STF20N90K5-datasheets-7293053.pdf
MOSFET N-CH 900V 20A TO220FP
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STF20N90K5 Description

STF20N90K5 Description

The STF20N90K5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Part of the MDmesh™ K5 series, it features a 900V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C, making it suitable for high-voltage switching. With a low on-resistance (Rds(on)) of 250mΩ at 10A, 10V, it ensures efficient power handling with minimal losses. The device is housed in a TO220FP package, offering robust thermal performance and mechanical durability. Its input capacitance (Ciss) of 1500pF @ 100V and gate charge (Qg) of 40nC @ 10V contribute to fast switching speeds, enhancing efficiency in high-frequency circuits.

STF20N90K5 Features

  • High Voltage Rating: 900V Vdss for reliable operation in high-power environments.
  • Low Rds(on): 250mΩ @ 10A, 10V reduces conduction losses.
  • Fast Switching: Optimized gate charge (40nC) and capacitance for improved efficiency.
  • Robust Thermal Performance: TO220FP package with 40W (Tc) power dissipation capability.
  • Wide Gate Drive Range: Vgs(max) of ±30V for flexible drive requirements.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term stability.
  • Advanced Technology: MDmesh™ K5 design ensures low switching losses and high avalanche ruggedness.

STF20N90K5 Applications

  • Switched-Mode Power Supplies (SMPS): Ideal for PFC, flyback, and forward converters.
  • Industrial Motor Drives: Efficient control in high-voltage motor applications.
  • Renewable Energy Systems: Solar inverters and wind power converters benefit from its high voltage and low-loss characteristics.
  • Lighting Solutions: Suitable for LED drivers and HID ballasts.
  • Automotive Systems: Used in auxiliary power modules and EV charging systems.

Conclusion of STF20N90K5

The STF20N90K5 stands out as a high-efficiency, high-voltage MOSFET with superior performance in power electronics. Its low Rds(on), fast switching, and rugged design make it a preferred choice for industrial, automotive, and renewable energy applications. The MDmesh™ K5 technology ensures reliability under harsh conditions, while the TO220FP package provides excellent thermal management. For engineers seeking a balance of power handling, efficiency, and durability, the STF20N90K5 is a compelling solution.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STF20N90K5 Documents

Download datasheets and manufacturer documentation for STF20N90K5

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Ersa STF20N90K5      

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