STMicroelectronics_STP6N90K5

STMicroelectronics
STP6N90K5  
Single FETs, MOSFETs

STMicroelectronics
STP6N90K5
278-STP6N90K5
Ersa
STMicroelectronics-STP6N90K5-datasheets-9673907.pdf
MOSFET N-CH 900V 6A TO220
In Stock : 1026

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STP6N90K5 Description

STP6N90K5 Description

The STP6N90K5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high voltage and current capabilities. This N-Channel device is part of the MDmesh™ K5 series, offering superior performance and reliability. With a drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 6A at 25°C, the STP6N90K5 is ideal for demanding power electronics applications.

STP6N90K5 Features

  • High Voltage and Current Ratings: The STP6N90K5 boasts a drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 6A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: The device features a low on-resistance (Rds On) of 1.1 Ohms at a drain current of 3A and a gate-source voltage (Vgs) of 10V, ensuring efficient power dissipation.
  • Robust Gate Drive Voltage: The STP6N90K5 has a maximum gate-source voltage (Vgs) of ±30V, providing flexibility in gate drive requirements.
  • High Power Dissipation: With a maximum power dissipation (Pd) of 110W at the case temperature (Tc), the device can handle high power loads in various applications.
  • Through-Hole Mounting: The STP6N90K5 is available in a through-hole package, providing a reliable mechanical connection for high-power applications.
  • Compliance with Regulations: The device is compliant with the RoHS3 directive and is classified as REACH unaffected, ensuring environmental and regulatory compliance.

STP6N90K5 Applications

The STP6N90K5 is ideal for a wide range of high-power applications, including:

  1. Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, particularly in applications requiring high efficiency and reliability.
  2. Motor Controls: The device's robust performance characteristics make it an excellent choice for motor control applications, where high voltage and current ratings are essential.
  3. Industrial Automation: The STP6N90K5's high power dissipation and low on-resistance make it ideal for use in industrial automation systems, where high reliability and performance are critical.
  4. Renewable Energy Systems: The device's high voltage and current capabilities make it suitable for use in renewable energy systems, such as solar inverters and wind power converters.

Conclusion of STP6N90K5

The STP6N90K5 from STMicroelectronics is a high-performance MOSFET designed for demanding power electronics applications. Its high voltage and current ratings, low on-resistance, and robust gate drive voltage make it an ideal choice for power supplies, motor controls, industrial automation, and renewable energy systems. With its compliance with environmental and regulatory standards, the STP6N90K5 offers a reliable and efficient solution for high-power applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP6N90K5 Documents

Download datasheets and manufacturer documentation for STP6N90K5

Ersa STP6N90K5      
Ersa Mult Dev Reinstate 6/Aug/2020       Mult Dev OBS 3/Jul/2020      

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