STMicroelectronics_STL18N65M2

STMicroelectronics
STL18N65M2  
Single FETs, MOSFETs

STMicroelectronics
STL18N65M2
278-STL18N65M2
Ersa
STMicroelectronics-STL18N65M2-datasheets-1174507.pdf
MOSFET N-CH 650V 8A POWERFLAT HV
In Stock : 3930

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    STL18N65M2 Description

    STMicroelectronics STL18N65M2 is a high-performance, low-power, and highly integrated single-chip solution for wireless communication in the 2.4 GHz ISM band. It is designed to meet the requirements of various wireless applications such as Zigbee, RF4CE, and proprietary protocols.

    Description:

    The STL18N65M2 is a highly integrated transceiver that combines a high-performance radio frequency (RF) section with a flexible and powerful digital baseband. It is based on a low-power CMOS process and is designed to operate in the 2.4 GHz ISM band, making it suitable for a wide range of wireless applications.

    Features:

    1. High performance: The STL18N65M2 offers high sensitivity, low power consumption, and excellent RF performance, making it suitable for a wide range of wireless applications.
    2. Low power consumption: The device is designed to operate with low power consumption, making it ideal for battery-powered applications.
    3. Highly integrated: The STL18N65M2 integrates a high-performance RF section with a flexible and powerful digital baseband, reducing the need for external components and simplifying the design.
    4. Wide range of wireless applications: The device is suitable for a wide range of wireless applications, including Zigbee, RF4CE, and proprietary protocols.
    5. Robustness: The device is designed to be robust against interference and multipath fading, ensuring reliable communication in challenging environments.

    Applications:

    The STL18N65M2 is suitable for a wide range of wireless applications, including:

    1. Home automation: The device can be used in home automation systems to control and monitor various devices such as lights, thermostats, and security systems.
    2. Industrial control: The STL18N65M2 can be used in industrial control systems for wireless communication between sensors, actuators, and controllers.
    3. Medical devices: The device can be used in wireless medical devices such as blood glucose monitors, heart rate monitors, and blood pressure monitors.
    4. Consumer electronics: The STL18N65M2 can be used in consumer electronics such as wireless speakers, headphones, and gaming controllers.
    5. Smart energy: The device can be used in smart energy systems for wireless communication between smart meters, inverters, and home energy management systems.

    In summary, the STMicroelectronics STL18N65M2 is a high-performance, low-power, and highly integrated single-chip solution for wireless communication in the 2.4 GHz ISM band. It offers excellent RF performance, low power consumption, and a wide range of wireless applications, making it an ideal choice for a variety of wireless communication needs.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STL18N65M2 Documents

    Download datasheets and manufacturer documentation for STL18N65M2

    Ersa Mult Dev Wafer Site Add 3/Aug/2018      
    Ersa STL18N65M2      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021      
    Ersa STL18N65M2      

    Shopping Guide

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    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
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