STMicroelectronics_STF24N60DM2
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STMicroelectronics
STF24N60DM2

278-STF24N60DM2
PDF Datasheet
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package
16 weeks

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STF24N60DM2 Description

STF24N60DM2 is a high voltage N-channel MOSFET from STMicroelectronics. It is designed for use in a variety of applications, including power switching and amplification in power electronics circuits.

Description:

The STF24N60DM2 is a high voltage N-channel MOSFET with a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 24A. It features a low on-state resistance (Rds(on)) of 0.55 ohms (maximum) and a fast switching speed, making it suitable for use in high frequency applications.

Features:

  • Maximum drain-source voltage (Vds) of 600V
  • Continuous drain current (Id) of 24A
  • Low on-state resistance (Rds(on)) of 0.55 ohms (maximum)
  • Fast switching speed
  • Suitable for use in high frequency applications

Applications:

The STF24N60DM2 is suitable for use in a variety of applications, including:

  • Power switching and amplification in power electronics circuits
  • Motor control and drive circuits
  • Battery protection circuits
  • High voltage power supplies
  • Inverter circuits

In summary, the STF24N60DM2 is a high voltage N-channel MOSFET from STMicroelectronics that is designed for use in power switching and amplification applications. It features a low on-state resistance and fast switching speed, making it suitable for use in high frequency applications. It is commonly used in power electronics circuits, motor control and drive circuits, battery protection circuits, high voltage power supplies, and inverter circuits.

FAQ

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